Abstract
Boron (BF2, 20 keV, 3.14/cm2) and carbon (13 keV, 1015/cm2) implanted silicon annealed at 800 °C during 30 min or at 1000 °C during 10 s has been investigated using a laser-assisted wide-angle tomographic atom probe (LaWaTAP) instrument. Boron-silicon clusters containing ~ 1.3 at.% of boron atoms have been observed in boron implanted silicon with a concentration exceeding the solubility limit. Often identified as BICs, they are interpreted as a metastable phase. Furthermore, addition of carbon clearly reduced the clustering of boron. This was interpreted as a diminution of boron diffusion or as an increase of the solubility limit of boron. Carbon-silicon clusters containing ~ 1.5 at.% of carbon atoms were observed, maybe the precursors of the SiC phase.
| Original language | English |
|---|---|
| Pages (from-to) | 2406-2408 |
| Number of pages | 3 |
| Journal | Thin Solid Films |
| Volume | 518 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 26 Feb 2010 |
| Externally published | Yes |
Keywords
- Boron
- Carbon
- Clustering
- Laser atom probe tomography
Fingerprint
Dive into the research topics of 'Atomic-scale study of the role of carbon on boron clustering'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver