Automated characterization of HF power transistors by source-pull and multiharmonic load-pull measurements based on six-port techniques

Gerald Berghoff; Eric Bergeault; Bernard Huyart; Louis Jallet

doi:10.1109/22.739284

Automated characterization of HF power transistors by source-pull and multiharmonic load-pull measurements based on six-port techniques

Gerald Berghoff
, Eric Bergeault
, Bernard Huyart
, Louis Jallet

Telecom Paris
Nokia GmbH

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

An original measurement system for nonlinear microwave power-transistor characterization using six-port reflectometers is presented. It allows independent active tuning of the output impedances at fo and 2/o (multiharmonic load-pull) and variation of the source impedance at the input port at fo (source-pull). An appropriate search algorithm enables automatic optimization of the output impedances and leads to fast user-friendly operation of the system. Experimental results are shown for a commercial GaAs MESFET power transistor at fo - 2 GHz.

Original language	English
Pages (from-to)	2068-2073
Number of pages	6
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	46
Issue number	12 PART 1
DOIs	https://doi.org/10.1109/22.739284
Publication status	Published - 1 Dec 1998
Externally published	Yes

Keywords

Load-pull
Measurement automation
Multiharmonic
Nonlinear
Six-port
Source-pull

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10.1109/22.739284

Cite this

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title = "Automated characterization of HF power transistors by source-pull and multiharmonic load-pull measurements based on six-port techniques",

abstract = "An original measurement system for nonlinear microwave power-transistor characterization using six-port reflectometers is presented. It allows independent active tuning of the output impedances at fo and 2/o (multiharmonic load-pull) and variation of the source impedance at the input port at fo (source-pull). An appropriate search algorithm enables automatic optimization of the output impedances and leads to fast user-friendly operation of the system. Experimental results are shown for a commercial GaAs MESFET power transistor at fo - 2 GHz.",

keywords = "Load-pull, Measurement automation, Multiharmonic, Nonlinear, Six-port, Source-pull",

author = "Gerald Berghoff and Eric Bergeault and Bernard Huyart and Louis Jallet",

year = "1998",

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doi = "10.1109/22.739284",

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Automated characterization of HF power transistors by source-pull and multiharmonic load-pull measurements based on six-port techniques. / Berghoff, Gerald; Bergeault, Eric; Huyart, Bernard et al.
In: IEEE Transactions on Microwave Theory and Techniques, Vol. 46, No. 12 PART 1, 01.12.1998, p. 2068-2073.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Automated characterization of HF power transistors by source-pull and multiharmonic load-pull measurements based on six-port techniques

AU - Berghoff, Gerald

AU - Bergeault, Eric

AU - Huyart, Bernard

AU - Jallet, Louis

PY - 1998/12/1

Y1 - 1998/12/1

N2 - An original measurement system for nonlinear microwave power-transistor characterization using six-port reflectometers is presented. It allows independent active tuning of the output impedances at fo and 2/o (multiharmonic load-pull) and variation of the source impedance at the input port at fo (source-pull). An appropriate search algorithm enables automatic optimization of the output impedances and leads to fast user-friendly operation of the system. Experimental results are shown for a commercial GaAs MESFET power transistor at fo - 2 GHz.

AB - An original measurement system for nonlinear microwave power-transistor characterization using six-port reflectometers is presented. It allows independent active tuning of the output impedances at fo and 2/o (multiharmonic load-pull) and variation of the source impedance at the input port at fo (source-pull). An appropriate search algorithm enables automatic optimization of the output impedances and leads to fast user-friendly operation of the system. Experimental results are shown for a commercial GaAs MESFET power transistor at fo - 2 GHz.

KW - Load-pull

KW - Measurement automation

KW - Multiharmonic

KW - Nonlinear

KW - Six-port

KW - Source-pull

U2 - 10.1109/22.739284

DO - 10.1109/22.739284

M3 - Article

AN - SCOPUS:0032291248

SN - 0018-9480

VL - 46

SP - 2068

EP - 2073

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 12 PART 1

ER -

Automated characterization of HF power transistors by source-pull and multiharmonic load-pull measurements based on six-port techniques

Abstract

Keywords

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