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Band Gap Renormalization, Carrier Multiplication, and Stark Broadening in Photoexcited Black Phosphorus

  • Zhesheng Chen
  • , Jingwei Dong
  • , Evangelos Papalazarou
  • , Marino Marsi
  • , Christine Giorgetti
  • , Zailan Zhang
  • , Bingbing Tian
  • , Jean Pascal Rueff
  • , Amina Taleb-Ibrahimi
  • , Luca Perfetti
  • Synchrotron SOLEIL
  • Synchrotron SOLEIL
  • Université Paris-Saclay
  • SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology
  • Shenzhen University
  • Sorbonne Université

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)

Abstract

We investigate black phosphorus by time- and angle-resolved photoelectron spectroscopy. The electrons excited by 1.57 eV photons relax down to a conduction band minimum within 1 ps. Despite the low band gap value, no relevant amount of carrier multiplication could be detected at an excitation density 3-6 × 10 19 cm -3 . In the thermalized state, the band gap renormalization is negligible up to a photoexcitation density that fills the conduction band by 150 meV. Astonishingly, a Stark broadening of the valence band takes place at an early delay time. We argue that electrons and holes with a high excess energy lead to inhomogeneous screening of near surface fields. As a consequence, the chemical potential is no longer pinned in a narrow impurity band.

Original languageEnglish
Pages (from-to)488-493
Number of pages6
JournalNano Letters
Volume19
Issue number1
DOIs
Publication statusPublished - 9 Jan 2019
Externally publishedYes

Keywords

  • ARPES
  • Black phosphorus
  • Stark
  • band gap renormalization
  • ultrafast

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