Bias-crafted magnetic tunnel junctions with bistable spin-dependent states

M. Bowen; J. L. Maurice; A. Barthélémy; P. Prod'homme; E. Jacquet; J. P. Contour; D. Imhoff; C. Colliex

doi:10.1063/1.2345592

Bias-crafted magnetic tunnel junctions with bistable spin-dependent states

M. Bowen
, J. L. Maurice
, A. Barthélémy
, P. Prod'homme
, E. Jacquet
, J. P. Contour
, D. Imhoff
, C. Colliex

Centre national de la recherche scientifique
Université Paris-Saclay
UMR 7504 CNRS-ULP
Laboratoire de Physique des Solides

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

The authors have observed stable, reversible two-resistance states with substantial tunneling magnetoresistances of opposite signs in La _0.7Sr_0.3MnO₃/SrTiO₃/Co _1-xCr_x junctions. Electron energy loss spectroscopy studies reveal the segregation and oxidation of electrochemically reactive chromium at that interface, resulting in oxygen vacancies in the oxide barrier. Bias-induced switching between the two junction states is argued to reflect the incidence of these barrier defects at and near the electrically unstable SrTiO₃/Co_1-xCr_x interface. This affirms bias crafting as an additional lever in spintronic research across semiconducting spacers.

Original language	English
Article number	103517
Journal	Applied Physics Letters
Volume	89
Issue number	10
DOIs	https://doi.org/10.1063/1.2345592
Publication status	Published - 15 Sept 2006

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title = "Bias-crafted magnetic tunnel junctions with bistable spin-dependent states",

abstract = "The authors have observed stable, reversible two-resistance states with substantial tunneling magnetoresistances of opposite signs in La 0.7Sr0.3MnO3/SrTiO3/Co 1-xCrx junctions. Electron energy loss spectroscopy studies reveal the segregation and oxidation of electrochemically reactive chromium at that interface, resulting in oxygen vacancies in the oxide barrier. Bias-induced switching between the two junction states is argued to reflect the incidence of these barrier defects at and near the electrically unstable SrTiO3/Co1-xCrx interface. This affirms bias crafting as an additional lever in spintronic research across semiconducting spacers.",

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T1 - Bias-crafted magnetic tunnel junctions with bistable spin-dependent states

AU - Bowen, M.

AU - Maurice, J. L.

AU - Barthélémy, A.

AU - Prod'homme, P.

AU - Jacquet, E.

AU - Contour, J. P.

AU - Imhoff, D.

AU - Colliex, C.

PY - 2006/9/15

Y1 - 2006/9/15

N2 - The authors have observed stable, reversible two-resistance states with substantial tunneling magnetoresistances of opposite signs in La 0.7Sr0.3MnO3/SrTiO3/Co 1-xCrx junctions. Electron energy loss spectroscopy studies reveal the segregation and oxidation of electrochemically reactive chromium at that interface, resulting in oxygen vacancies in the oxide barrier. Bias-induced switching between the two junction states is argued to reflect the incidence of these barrier defects at and near the electrically unstable SrTiO3/Co1-xCrx interface. This affirms bias crafting as an additional lever in spintronic research across semiconducting spacers.

AB - The authors have observed stable, reversible two-resistance states with substantial tunneling magnetoresistances of opposite signs in La 0.7Sr0.3MnO3/SrTiO3/Co 1-xCrx junctions. Electron energy loss spectroscopy studies reveal the segregation and oxidation of electrochemically reactive chromium at that interface, resulting in oxygen vacancies in the oxide barrier. Bias-induced switching between the two junction states is argued to reflect the incidence of these barrier defects at and near the electrically unstable SrTiO3/Co1-xCrx interface. This affirms bias crafting as an additional lever in spintronic research across semiconducting spacers.

U2 - 10.1063/1.2345592

DO - 10.1063/1.2345592

M3 - Article

AN - SCOPUS:33748479710

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103517

ER -

Bias-crafted magnetic tunnel junctions with bistable spin-dependent states

Abstract

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