Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures

S. Azaizia; A. Balocchi; S. Mazzucato; F. Cadiz; F. Beato De Le Salle; H. Lehec; D. Lagarde; A. Arnoult; T. Amand; C. Fontaine; H. Carrère; X. Marie

doi:10.1088/1361-6641/aae354

Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures

S. Azaizia
, A. Balocchi
, S. Mazzucato
, F. Cadiz
, F. Beato De Le Salle
, H. Lehec
, D. Lagarde
, A. Arnoult
, T. Amand
, C. Fontaine
, H. Carrère
, X. Marie

Université Paul Sabatier

Research output: Contribution to journal › Article › peer-review

Abstract

Time-resolved optical orientation experiments have been performed in dilute bismide structures. Bulk layers with bismuth fractions in the range 1%-3.8% and quantum wells with bismuth fractions in the range 2.4%-7% were investigated. A clear decrease of the electron spin relaxation time is evidenced in both cases when the bismuth content increases. These results can be well interpreted by the increased efficiency of the spin relaxation mechanisms due to the bismuth induced larger spin-orbit interaction in these alloys.

Original language	English
Article number	114013
Journal	Semiconductor Science and Technology
Volume	33
Issue number	11
DOIs	https://doi.org/10.1088/1361-6641/aae354
Publication status	Published - 17 Oct 2018
Externally published	Yes

Keywords

GaAsBi
electron spin relaxation time
quantum wells

Access to Document

10.1088/1361-6641/aae354

Cite this

Azaizia, S., Balocchi, A., Mazzucato, S., Cadiz, F., Beato De Le Salle, F., Lehec, H., Lagarde, D., Arnoult, A., Amand, T., Fontaine, C., Carrère, H., & Marie, X. (2018). Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures. Semiconductor Science and Technology, 33(11), Article 114013. https://doi.org/10.1088/1361-6641/aae354

@article{e5e1f71656f94cc3a14d5952391beae8,

title = "Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures",

abstract = "Time-resolved optical orientation experiments have been performed in dilute bismide structures. Bulk layers with bismuth fractions in the range 1\%-3.8\% and quantum wells with bismuth fractions in the range 2.4\%-7\% were investigated. A clear decrease of the electron spin relaxation time is evidenced in both cases when the bismuth content increases. These results can be well interpreted by the increased efficiency of the spin relaxation mechanisms due to the bismuth induced larger spin-orbit interaction in these alloys.",

keywords = "GaAsBi, electron spin relaxation time, quantum wells",

author = "S. Azaizia and A. Balocchi and S. Mazzucato and F. Cadiz and \{Beato De Le Salle\}, F. and H. Lehec and D. Lagarde and A. Arnoult and T. Amand and C. Fontaine and H. Carr{\`e}re and X. Marie",

note = "Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

year = "2018",

month = oct,

day = "17",

doi = "10.1088/1361-6641/aae354",

language = "English",

volume = "33",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

number = "11",

}

Azaizia, S, Balocchi, A, Mazzucato, S, Cadiz, F, Beato De Le Salle, F, Lehec, H, Lagarde, D, Arnoult, A, Amand, T, Fontaine, C, Carrère, H & Marie, X 2018, 'Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures', Semiconductor Science and Technology, vol. 33, no. 11, 114013. https://doi.org/10.1088/1361-6641/aae354

TY - JOUR

T1 - Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures

AU - Azaizia, S.

AU - Balocchi, A.

AU - Mazzucato, S.

AU - Cadiz, F.

AU - Beato De Le Salle, F.

AU - Lehec, H.

AU - Lagarde, D.

AU - Arnoult, A.

AU - Amand, T.

AU - Fontaine, C.

AU - Carrère, H.

AU - Marie, X.

PY - 2018/10/17

Y1 - 2018/10/17

N2 - Time-resolved optical orientation experiments have been performed in dilute bismide structures. Bulk layers with bismuth fractions in the range 1%-3.8% and quantum wells with bismuth fractions in the range 2.4%-7% were investigated. A clear decrease of the electron spin relaxation time is evidenced in both cases when the bismuth content increases. These results can be well interpreted by the increased efficiency of the spin relaxation mechanisms due to the bismuth induced larger spin-orbit interaction in these alloys.

AB - Time-resolved optical orientation experiments have been performed in dilute bismide structures. Bulk layers with bismuth fractions in the range 1%-3.8% and quantum wells with bismuth fractions in the range 2.4%-7% were investigated. A clear decrease of the electron spin relaxation time is evidenced in both cases when the bismuth content increases. These results can be well interpreted by the increased efficiency of the spin relaxation mechanisms due to the bismuth induced larger spin-orbit interaction in these alloys.

KW - GaAsBi

KW - electron spin relaxation time

KW - quantum wells

UR - https://www.scopus.com/pages/publications/85055331941

U2 - 10.1088/1361-6641/aae354

DO - 10.1088/1361-6641/aae354

M3 - Article

AN - SCOPUS:85055331941

SN - 0268-1242

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 11

M1 - 114013

ER -

Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this