Bulk and surface properties of RTCVD Si3N4 films for optical device applications

F. Lebland; Z. Z. Wang; J. Flicstein; C. Licoppe; Y. I. Nissim

doi:10.1016/0169-4332(93)90504-5

Bulk and surface properties of RTCVD Si₃N₄ films for optical device applications

F. Lebland, Z. Z. Wang, J. Flicstein, C. Licoppe, Y. I. Nissim

Research output: Contribution to journal › Article › peer-review

Abstract

Rapid thermal chemical vapour deposition is proposed to obtain optical-quality silicon nitride films on III-V semiconductors. The films have been obtained on InP at high temperature with a very high growth rate. Structural and morphological properties of nearly stoichiometric silicon nitride are presented. Nuclear reaction analysis (NRA), Rutherford backscattering (RBS) and Fourier transform infrared spectroscopy showed that the films are dense and have a uniform thickness. Scanning electron microscopy (SEM) revealed that the surface morphology of the silicon nitride films is dependent on the thickness of the films. Atomic force microscopy (AFM) allowed us to image the dielectric surface and to obtain roughness values as a function of the experimental conditions of deposition. Refractive indices measured at 6328 Å are linearly dependent on the film thickness. We show that the refractive index in this case is also tightly connected to the surface morphology of the deposited thin film.

Original language	English
Pages (from-to)	198-203
Number of pages	6
Journal	Applied Surface Science
Volume	69
Issue number	1-4
DOIs	https://doi.org/10.1016/0169-4332(93)90504-5
Publication status	Published - 2 May 1993
Externally published	Yes

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Cite this

@article{c4993e1fa7084859bc07ece594738431,

title = "Bulk and surface properties of RTCVD Si3N4 films for optical device applications",

abstract = "Rapid thermal chemical vapour deposition is proposed to obtain optical-quality silicon nitride films on III-V semiconductors. The films have been obtained on InP at high temperature with a very high growth rate. Structural and morphological properties of nearly stoichiometric silicon nitride are presented. Nuclear reaction analysis (NRA), Rutherford backscattering (RBS) and Fourier transform infrared spectroscopy showed that the films are dense and have a uniform thickness. Scanning electron microscopy (SEM) revealed that the surface morphology of the silicon nitride films is dependent on the thickness of the films. Atomic force microscopy (AFM) allowed us to image the dielectric surface and to obtain roughness values as a function of the experimental conditions of deposition. Refractive indices measured at 6328 {\AA} are linearly dependent on the film thickness. We show that the refractive index in this case is also tightly connected to the surface morphology of the deposited thin film.",

author = "F. Lebland and Wang, \{Z. Z.\} and J. Flicstein and C. Licoppe and Nissim, \{Y. I.\}",

year = "1993",

month = may,

day = "2",

doi = "10.1016/0169-4332(93)90504-5",

language = "English",

volume = "69",

pages = "198--203",

journal = "Applied Surface Science",

issn = "0169-4332",

number = "1-4",

}

TY - JOUR

T1 - Bulk and surface properties of RTCVD Si3N4 films for optical device applications

AU - Lebland, F.

AU - Wang, Z. Z.

AU - Flicstein, J.

AU - Licoppe, C.

AU - Nissim, Y. I.

PY - 1993/5/2

Y1 - 1993/5/2

N2 - Rapid thermal chemical vapour deposition is proposed to obtain optical-quality silicon nitride films on III-V semiconductors. The films have been obtained on InP at high temperature with a very high growth rate. Structural and morphological properties of nearly stoichiometric silicon nitride are presented. Nuclear reaction analysis (NRA), Rutherford backscattering (RBS) and Fourier transform infrared spectroscopy showed that the films are dense and have a uniform thickness. Scanning electron microscopy (SEM) revealed that the surface morphology of the silicon nitride films is dependent on the thickness of the films. Atomic force microscopy (AFM) allowed us to image the dielectric surface and to obtain roughness values as a function of the experimental conditions of deposition. Refractive indices measured at 6328 Å are linearly dependent on the film thickness. We show that the refractive index in this case is also tightly connected to the surface morphology of the deposited thin film.

AB - Rapid thermal chemical vapour deposition is proposed to obtain optical-quality silicon nitride films on III-V semiconductors. The films have been obtained on InP at high temperature with a very high growth rate. Structural and morphological properties of nearly stoichiometric silicon nitride are presented. Nuclear reaction analysis (NRA), Rutherford backscattering (RBS) and Fourier transform infrared spectroscopy showed that the films are dense and have a uniform thickness. Scanning electron microscopy (SEM) revealed that the surface morphology of the silicon nitride films is dependent on the thickness of the films. Atomic force microscopy (AFM) allowed us to image the dielectric surface and to obtain roughness values as a function of the experimental conditions of deposition. Refractive indices measured at 6328 Å are linearly dependent on the film thickness. We show that the refractive index in this case is also tightly connected to the surface morphology of the deposited thin film.

U2 - 10.1016/0169-4332(93)90504-5

DO - 10.1016/0169-4332(93)90504-5

M3 - Article

AN - SCOPUS:0027905176

SN - 0169-4332

VL - 69

SP - 198

EP - 203

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Bulk and surface properties of RTCVD Si3N4 films for optical device applications

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Bulk and surface properties of RTCVD Si₃N₄ films for optical device applications