@inproceedings{f4925673c84a4e6dbba919d1d8078e5a,
title = "Carrier escape from ground state and non-zero resonance frequency at low bias powers for semiconductor quantum-dot lasers",
abstract = "The three-dimensional confinement of electrons and holes in the semiconductor quantum dot (QD) structure profoundly changes its density of states compared to the bulk semiconductor or the thin-film quantum well (QW) structure. The aim of this paper is to theoretically investigate the microwave properties of InAs/InP(311B) QD lasers. A new expression of the modulation transfer function is derived for the analysis of QD laser modulation properties based on a set of four rate equations. Analytical calculations point out that carrier escape from ground state (GS) to excited state (ES) induces a non-zero resonance frequency at low bias powers. Calculations also show that the carrier escape leads to a larger damping factor offset as compared to conventional QW lasers. These results are of prime importance for a better understanding of the carrier dynamics in QD lasers as well as for further optimization of low cost sources for optical telecommunications.",
keywords = "laser, modulation response, quantum dot, semiconductor",
author = "C. Wang and F. Grillot and J. Even",
year = "2012",
month = jun,
day = "20",
doi = "10.1117/12.946053",
language = "English",
isbn = "9780819491244",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Semiconductor Lasers and Laser Dynamics V",
note = "Semiconductor Lasers and Laser Dynamics V ; Conference date: 16-04-2012 Through 19-04-2012",
}