Channeling efficiency dependence on bending radius and thermal vibration amplitude of the model for the channeling of high-energy particles in straight and bent crystals implemented in Geant4

Monte Carlo simulations of the interaction of particles with matter are usually done with downloadable toolkits such as Geant4. A model suitable for the implementation into Geant4 for the interaction of high-energy particles in straight and bent crystals was developed and implemented. The model relies on the continuum potential approximation. The variation of the Geant4 model for the description of the orientational effect as a function of the physical parameters for the calculation of the interplanar potential is presented. The simulations are capable of reproducing the variation of the efficiency of channeling as a function of the thermal vibration amplitude and the bending radius of a bent Si strip. The study can be useful for the simulation of the channeling effect in experiments at GeV/c energies.