Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM)

N. Dinu; P. Barrillon; C. Bazin; N. Belcari; M. G. Bisogni; S. Bondil-Blin; M. Boscardin; V. Chaumat; G. Collazuol; C. De La Taille; A. Del Guerra; G. Llosá́; S. Marcatili; M. Melchiorri; C. Piemonte; V. Puill; A. Tarolli; J. F. Vagnucci; N. Zorzi

doi:10.1088/1748-0221/4/03/P03016

Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM)

N. Dinu
, P. Barrillon
, C. Bazin
, N. Belcari
, M. G. Bisogni
, S. Bondil-Blin
, M. Boscardin
, V. Chaumat
, G. Collazuol
, C. De La Taille
, A. Del Guerra
, G. Llosá́
, S. Marcatili
, M. Melchiorri
, C. Piemonte
, V. Puill
, A. Tarolli
, J. F. Vagnucci
, N. Zorzi

Université Paris-Sud
Institute of Space Sciences
University of Pisa
Istituto Nazionale di Fisica Nucleare, Sezione di Pisa
FBK-irst
Scuola Normale Superiore di Pisa

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

This work reports on the electrical (static and dynamic) as well as on the optical characteristics of a prototype matrix of Silicon Photomultipliers (SiPM). The prototype matrix consists of 4 × 4 SiPM's on the same substrat fabricated at FBK-irst (Trento, Italy). Each SiPM of the matrix has an area of 1 × 1mm² and it is composed of 625 microcells connected in parallel. Each microcell of the SiPM is a GM-APD (n⁺/p junction on P+ substrate) with an area of 40 × 40 μm² connected in series with its integrated polysilicon quenching resistance. The static characteristics as breakdown voltage, quenching resistance, post-breakdown dark current as well as the dynamic characteristics as gain and dark count rate have been analysed. The photon detection efficiency as a function of wavelength and operation voltage has been also estimated.

Original language	English
Article number	P03016
Journal	Journal of Instrumentation
Volume	4
Issue number	3
DOIs	https://doi.org/10.1088/1748-0221/4/03/P03016
Publication status	Published - 16 Nov 2009
Externally published	Yes

Keywords

Particle detectors
Photon detectors for UV, visible and IR photons (solid-state)

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10.1088/1748-0221/4/03/P03016

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Dinu, N., Barrillon, P., Bazin, C., Belcari, N., Bisogni, M. G., Bondil-Blin, S., Boscardin, M., Chaumat, V., Collazuol, G., De La Taille, C., Del Guerra, A., Llosá́, G., Marcatili, S., Melchiorri, M., Piemonte, C., Puill, V., Tarolli, A., Vagnucci, J. F., & Zorzi, N. (2009). Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM). Journal of Instrumentation, 4(3), Article P03016. https://doi.org/10.1088/1748-0221/4/03/P03016

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title = "Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM)",

abstract = "This work reports on the electrical (static and dynamic) as well as on the optical characteristics of a prototype matrix of Silicon Photomultipliers (SiPM). The prototype matrix consists of 4 {\texttimes} 4 SiPM's on the same substrat fabricated at FBK-irst (Trento, Italy). Each SiPM of the matrix has an area of 1 {\texttimes} 1mm2 and it is composed of 625 microcells connected in parallel. Each microcell of the SiPM is a GM-APD (n+/p junction on P+ substrate) with an area of 40 {\texttimes} 40 μm2 connected in series with its integrated polysilicon quenching resistance. The static characteristics as breakdown voltage, quenching resistance, post-breakdown dark current as well as the dynamic characteristics as gain and dark count rate have been analysed. The photon detection efficiency as a function of wavelength and operation voltage has been also estimated.",

keywords = "Particle detectors, Photon detectors for UV, visible and IR photons (solid-state)",

author = "N. Dinu and P. Barrillon and C. Bazin and N. Belcari and Bisogni, \{M. G.\} and S. Bondil-Blin and M. Boscardin and V. Chaumat and G. Collazuol and \{De La Taille\}, C. and \{Del Guerra\}, A. and G. Llos{\'a}́ and S. Marcatili and M. Melchiorri and C. Piemonte and V. Puill and A. Tarolli and Vagnucci, \{J. F.\} and N. Zorzi",

year = "2009",

month = nov,

day = "16",

doi = "10.1088/1748-0221/4/03/P03016",

language = "English",

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journal = "Journal of Instrumentation",

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Dinu, N, Barrillon, P, Bazin, C, Belcari, N, Bisogni, MG, Bondil-Blin, S, Boscardin, M, Chaumat, V, Collazuol, G, De La Taille, C, Del Guerra, A, Llosá́, G, Marcatili, S, Melchiorri, M, Piemonte, C, Puill, V, Tarolli, A, Vagnucci, JF & Zorzi, N 2009, 'Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM)', Journal of Instrumentation, vol. 4, no. 3, P03016. https://doi.org/10.1088/1748-0221/4/03/P03016

TY - JOUR

T1 - Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM)

AU - Dinu, N.

AU - Barrillon, P.

AU - Bazin, C.

AU - Belcari, N.

AU - Bisogni, M. G.

AU - Bondil-Blin, S.

AU - Boscardin, M.

AU - Chaumat, V.

AU - Collazuol, G.

AU - De La Taille, C.

AU - Del Guerra, A.

AU - Llosá́, G.

AU - Marcatili, S.

AU - Melchiorri, M.

AU - Piemonte, C.

AU - Puill, V.

AU - Tarolli, A.

AU - Vagnucci, J. F.

AU - Zorzi, N.

PY - 2009/11/16

Y1 - 2009/11/16

N2 - This work reports on the electrical (static and dynamic) as well as on the optical characteristics of a prototype matrix of Silicon Photomultipliers (SiPM). The prototype matrix consists of 4 × 4 SiPM's on the same substrat fabricated at FBK-irst (Trento, Italy). Each SiPM of the matrix has an area of 1 × 1mm2 and it is composed of 625 microcells connected in parallel. Each microcell of the SiPM is a GM-APD (n+/p junction on P+ substrate) with an area of 40 × 40 μm2 connected in series with its integrated polysilicon quenching resistance. The static characteristics as breakdown voltage, quenching resistance, post-breakdown dark current as well as the dynamic characteristics as gain and dark count rate have been analysed. The photon detection efficiency as a function of wavelength and operation voltage has been also estimated.

AB - This work reports on the electrical (static and dynamic) as well as on the optical characteristics of a prototype matrix of Silicon Photomultipliers (SiPM). The prototype matrix consists of 4 × 4 SiPM's on the same substrat fabricated at FBK-irst (Trento, Italy). Each SiPM of the matrix has an area of 1 × 1mm2 and it is composed of 625 microcells connected in parallel. Each microcell of the SiPM is a GM-APD (n+/p junction on P+ substrate) with an area of 40 × 40 μm2 connected in series with its integrated polysilicon quenching resistance. The static characteristics as breakdown voltage, quenching resistance, post-breakdown dark current as well as the dynamic characteristics as gain and dark count rate have been analysed. The photon detection efficiency as a function of wavelength and operation voltage has been also estimated.

KW - Particle detectors

KW - Photon detectors for UV, visible and IR photons (solid-state)

UR - https://www.scopus.com/pages/publications/71049152359

U2 - 10.1088/1748-0221/4/03/P03016

DO - 10.1088/1748-0221/4/03/P03016

M3 - Article

AN - SCOPUS:71049152359

SN - 1748-0221

VL - 4

JO - Journal of Instrumentation

JF - Journal of Instrumentation

IS - 3

M1 - P03016

ER -

Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM)

Abstract

Keywords

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