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Characterization of a prototype matrix of Silicon PhotoMultipliers

  • N. Dinu
  • , P. Barrillon
  • , C. Bazin
  • , N. Belcari
  • , M. G. Bisogni
  • , S. Bondil-Blin
  • , M. Boscardin
  • , V. Chaumat
  • , G. Collazuol
  • , C. De La Taille
  • , A. Del Guerra
  • , G. Llosá
  • , S. Marcatili
  • , M. Melchiorri
  • , C. Piemonte
  • , V. Puill
  • , A. Tarolli
  • , J. F. Vagnucci
  • , N. Zorzi
  • Université Paris-Sud
  • University of Pisa
  • Istituto Nazionale di Fisica Nucleare, Sezione di Pisa
  • FBK-irst
  • Scuola Normale Superiore di Pisa

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

This work reports on the electrical as well as the optical characterizations of a prototype matrix of Silicon PhotoMultipliers (SiPM). The electrical test consists of the measurement of the static (breakdown voltage, quenching resistance, post-breakdown dark current) as well as the dynamic characteristics (gain, dark count rate). The optical test consists of the estimation of the photon detection efficiency as a function of wavelength as well as operation voltage.

Original languageEnglish
Pages (from-to)101-104
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume610
Issue number1
DOIs
Publication statusPublished - 21 Oct 2009
Externally publishedYes

Keywords

  • Dark count rate
  • Gain
  • Matrix
  • Photodetectors
  • Photon detection efficiency
  • Silicon PhotoMultiplier

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