Characterization of Cu(In,Ga)Se2 electrodeposited and co-evaporated devices by means of concentrated illumination

M. Paire, C. Jean, L. Lombez, T. Sidali, A. Duchatelet, E. Chassaing, G. Savidand, F. Donsanti, M. Jubault, S. Collin, J. L. Pelouard, D. Lincot, J. F. Guillemoles

Research output: Contribution to journalArticlepeer-review

Abstract

We present a new Cu(In,Ga)Se2 characterization tool: Cu(In,Ga)Se2 microcells. By creating pixels on a Cu(In,Ga)Se 2 substrate, we are able to test electrically different locations. Moreover, because of the reduced size of the cells, (5-to 500-μm wide), heat and spreading resistance losses are made negligible, which make high flux characterizations available. We analyze current-voltage curves under high concentration to gain insight in the physical properties of Cu(In,Ga)Se 2 cells. From our analysis, Cu(In,Ga)Se 2 electrodeposited absorbers present resistivity fluctuations that are much more important than co-evaporated ones. These absorbers, as they present more electronic defects, are also more affected by the Voc increase under intense fluxes, and the efficiency gains can be very significant: up to 6% absolute efficiency points at less than 50 suns.

Original languageEnglish
Article number6695773
Pages (from-to)693-696
Number of pages4
JournalIEEE Journal of Photovoltaics
Volume4
Issue number2
DOIs
Publication statusPublished - 1 Mar 2014

Keywords

  • Current-voltage characteristics
  • photovoltaic cells

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