Characterization of microcrystalline silicon by high wavenumber Raman scattering

Erik V. Johnson; Laurent Kroely; Mario Moreno; Pere Roca I Cabarrocas

doi:10.1557/proc-1153-a16-06

Characterization of microcrystalline silicon by high wavenumber Raman scattering

Erik V. Johnson
, Laurent Kroely
, Mario Moreno
, Pere Roca I Cabarrocas

Institut polytechnique de Paris

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

One of the primary challenges in the application of hydrogenated microcrystalline silicon (μc-Si:H) to photovoltaic cells is achieving high growth rates while maintaining good material quality over a wide process window. The rapid characterization of the material without generating a complete cell is thus a useful tool to determine said process window. Infrared absorption due to the various vibrational modes of the material has been used as a coarse tool towards this purpose, but the use of FTIR to perform this diagnosis limits the substrates upon which the analysis can be performed. We report on the use of high wave-number (1800-2200 cm^-1) Raman scattering to perform a similar role of telltale peak detection directly on solar cells and on substrates suitable for thin-film photovoltaics. We evaluate material grown from SiF₄ by RF-PECVD and from SiH₄ by Matrix Distributed Electron Cyclotron Resonance (MDECR-) PECVD.

Original language	English
Title of host publication	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009
Publisher	Materials Research Society
Pages	319-324
Number of pages	6
ISBN (Print)	9781605111261
DOIs	https://doi.org/10.1557/proc-1153-a16-06
Publication status	Published - 1 Jan 2009
Event	2009 MRS Spring Meeting - San Francisco, CA, United States Duration: 13 Apr 2009 → 17 Apr 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1153
ISSN (Print)	0272-9172

Conference

Conference	2009 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	13/04/09 → 17/04/09

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1557/proc-1153-a16-06

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Johnson, E. V., Kroely, L., Moreno, M., & Roca I Cabarrocas, P. (2009). Characterization of microcrystalline silicon by high wavenumber Raman scattering. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009 (pp. 319-324). (Materials Research Society Symposium Proceedings; Vol. 1153). Materials Research Society. https://doi.org/10.1557/proc-1153-a16-06

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title = "Characterization of microcrystalline silicon by high wavenumber Raman scattering",

abstract = "One of the primary challenges in the application of hydrogenated microcrystalline silicon (μc-Si:H) to photovoltaic cells is achieving high growth rates while maintaining good material quality over a wide process window. The rapid characterization of the material without generating a complete cell is thus a useful tool to determine said process window. Infrared absorption due to the various vibrational modes of the material has been used as a coarse tool towards this purpose, but the use of FTIR to perform this diagnosis limits the substrates upon which the analysis can be performed. We report on the use of high wave-number (1800-2200 cm-1) Raman scattering to perform a similar role of telltale peak detection directly on solar cells and on substrates suitable for thin-film photovoltaics. We evaluate material grown from SiF4 by RF-PECVD and from SiH4 by Matrix Distributed Electron Cyclotron Resonance (MDECR-) PECVD.",

author = "Johnson, \{Erik V.\} and Laurent Kroely and Mario Moreno and \{Roca I Cabarrocas\}, Pere",

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booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009",

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Johnson, EV, Kroely, L, Moreno, M & Roca I Cabarrocas, P 2009, Characterization of microcrystalline silicon by high wavenumber Raman scattering. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009. Materials Research Society Symposium Proceedings, vol. 1153, Materials Research Society, pp. 319-324, 2009 MRS Spring Meeting, San Francisco, CA, United States, 13/04/09. https://doi.org/10.1557/proc-1153-a16-06

Characterization of microcrystalline silicon by high wavenumber Raman scattering. / Johnson, Erik V.; Kroely, Laurent; Moreno, Mario et al.
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009. Materials Research Society, 2009. p. 319-324 (Materials Research Society Symposium Proceedings; Vol. 1153).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characterization of microcrystalline silicon by high wavenumber Raman scattering

AU - Johnson, Erik V.

AU - Kroely, Laurent

AU - Moreno, Mario

AU - Roca I Cabarrocas, Pere

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Y1 - 2009/1/1

N2 - One of the primary challenges in the application of hydrogenated microcrystalline silicon (μc-Si:H) to photovoltaic cells is achieving high growth rates while maintaining good material quality over a wide process window. The rapid characterization of the material without generating a complete cell is thus a useful tool to determine said process window. Infrared absorption due to the various vibrational modes of the material has been used as a coarse tool towards this purpose, but the use of FTIR to perform this diagnosis limits the substrates upon which the analysis can be performed. We report on the use of high wave-number (1800-2200 cm-1) Raman scattering to perform a similar role of telltale peak detection directly on solar cells and on substrates suitable for thin-film photovoltaics. We evaluate material grown from SiF4 by RF-PECVD and from SiH4 by Matrix Distributed Electron Cyclotron Resonance (MDECR-) PECVD.

AB - One of the primary challenges in the application of hydrogenated microcrystalline silicon (μc-Si:H) to photovoltaic cells is achieving high growth rates while maintaining good material quality over a wide process window. The rapid characterization of the material without generating a complete cell is thus a useful tool to determine said process window. Infrared absorption due to the various vibrational modes of the material has been used as a coarse tool towards this purpose, but the use of FTIR to perform this diagnosis limits the substrates upon which the analysis can be performed. We report on the use of high wave-number (1800-2200 cm-1) Raman scattering to perform a similar role of telltale peak detection directly on solar cells and on substrates suitable for thin-film photovoltaics. We evaluate material grown from SiF4 by RF-PECVD and from SiH4 by Matrix Distributed Electron Cyclotron Resonance (MDECR-) PECVD.

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SN - 9781605111261

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BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009

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ER -

Characterization of microcrystalline silicon by high wavenumber Raman scattering

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