TY - JOUR
T1 - Characterization of silicon heterojunctions for solar cells
AU - Kleider, Jean Paul
AU - Alvarez, Jose
AU - Ankudinov, Alexander Vitalievitch
AU - Gudovskikh, Alexander Sergeevitch
AU - Gushchina, Ekaterina Vladimirovna
AU - Labrune, Martin
AU - Maslova, Olga Alexandrovna
AU - Favre, Wilfried
AU - Gueunier-Farret, Marie Estelle
AU - Rocai Cabarrocas, Pere
AU - Terukov, Eugene Ivanovitch
PY - 2011/1/1
Y1 - 2011/1/1
N2 - Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision.
AB - Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision.
U2 - 10.1186/1556-276X-6-152
DO - 10.1186/1556-276X-6-152
M3 - Article
AN - SCOPUS:84255204744
SN - 1931-7573
VL - 6
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 1
M1 - 152
ER -