Charge puddles in a completely compensated topological insulator

C. W. Rischau; A. Ubaldini; E. Giannini; C. J.Van Der Beek

doi:10.1088/1367-2630/18/7/073024

Charge puddles in a completely compensated topological insulator

C. W. Rischau
, A. Ubaldini
, E. Giannini
, C. J.Van Der Beek

Research output: Contribution to journal › Article › peer-review

Abstract

Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in situ electrical transport measurements to fine-tune the degree of compensation in Bi₂Te₃. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation.

Original language	English
Article number	073024
Journal	New Journal of Physics
Volume	18
Issue number	7
DOIs	https://doi.org/10.1088/1367-2630/18/7/073024
Publication status	Published - 1 Jul 2016
Externally published	Yes

Keywords

bismuth telluride
charge puddles
compensation
irradiation
topological insulator

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10.1088/1367-2630/18/7/073024

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title = "Charge puddles in a completely compensated topological insulator",

abstract = "Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in situ electrical transport measurements to fine-tune the degree of compensation in Bi2Te3. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation.",

keywords = "bismuth telluride, charge puddles, compensation, irradiation, topological insulator",

author = "Rischau, \{C. W.\} and A. Ubaldini and E. Giannini and Beek, \{C. J.Van Der\}",

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T1 - Charge puddles in a completely compensated topological insulator

AU - Rischau, C. W.

AU - Ubaldini, A.

AU - Giannini, E.

AU - Beek, C. J.Van Der

PY - 2016/7/1

Y1 - 2016/7/1

N2 - Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in situ electrical transport measurements to fine-tune the degree of compensation in Bi2Te3. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation.

AB - Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in situ electrical transport measurements to fine-tune the degree of compensation in Bi2Te3. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation.

KW - bismuth telluride

KW - charge puddles

KW - compensation

KW - irradiation

KW - topological insulator

U2 - 10.1088/1367-2630/18/7/073024

DO - 10.1088/1367-2630/18/7/073024

M3 - Article

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VL - 18

JO - New Journal of Physics

JF - New Journal of Physics

IS - 7

M1 - 073024

ER -

Charge puddles in a completely compensated topological insulator

Abstract

Keywords

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