CHEMISORPTION OF Al AND Ga ON THE GaAs (110) SURFACE.

C. A. Swarts; J. J. Barton; W. A. Goddard; T. C. McGill

doi:10.1116/1.570607

CHEMISORPTION OF Al AND Ga ON THE GaAs (110) SURFACE.

C. A. Swarts
, J. J. Barton
, W. A. Goddard
, T. C. McGill

Research output: Contribution to journal › Conference article › peer-review

Abstract

An investigation was made of the initial stages of chemisorption of Al and Ga on the clean GaAs (110) surface by applying quantum chemical methods to small clusters representing Al or Ga on GaAs (110). These calculations suggest that at smallest coverages Al or Ga bind to a surface Ga atom; for higher coverages Al and the surface Ga interchange positions. The binding energy, the chemical shifts of the Ga-3d, As-3d and Al-2p states, and the microscopic dipole associated with chemisorption of Al or Ga on GaAs (110) have been obtained. These results are compared to experimental values and further experiments are suggested.

Original language	English
Pages (from-to)	869-873
Number of pages	5
Journal	J Vac Sci Technol
Volume	17
Issue number	5
DOIs	https://doi.org/10.1116/1.570607
Publication status	Published - 1 Jan 1980
Externally published	Yes
Event	Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 7th - Estes Park, CO, USA Duration: 29 Jan 1980 → 31 Jan 1980

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10.1116/1.570607

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title = "CHEMISORPTION OF Al AND Ga ON THE GaAs (110) SURFACE.",

abstract = "An investigation was made of the initial stages of chemisorption of Al and Ga on the clean GaAs (110) surface by applying quantum chemical methods to small clusters representing Al or Ga on GaAs (110). These calculations suggest that at smallest coverages Al or Ga bind to a surface Ga atom; for higher coverages Al and the surface Ga interchange positions. The binding energy, the chemical shifts of the Ga-3d, As-3d and Al-2p states, and the microscopic dipole associated with chemisorption of Al or Ga on GaAs (110) have been obtained. These results are compared to experimental values and further experiments are suggested.",

author = "Swarts, \{C. A.\} and Barton, \{J. J.\} and Goddard, \{W. A.\} and McGill, \{T. C.\}",

year = "1980",

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doi = "10.1116/1.570607",

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pages = "869--873",

journal = "J Vac Sci Technol",

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note = "Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 7th ; Conference date: 29-01-1980 Through 31-01-1980",

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TY - JOUR

T1 - CHEMISORPTION OF Al AND Ga ON THE GaAs (110) SURFACE.

AU - Swarts, C. A.

AU - Barton, J. J.

AU - Goddard, W. A.

AU - McGill, T. C.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - An investigation was made of the initial stages of chemisorption of Al and Ga on the clean GaAs (110) surface by applying quantum chemical methods to small clusters representing Al or Ga on GaAs (110). These calculations suggest that at smallest coverages Al or Ga bind to a surface Ga atom; for higher coverages Al and the surface Ga interchange positions. The binding energy, the chemical shifts of the Ga-3d, As-3d and Al-2p states, and the microscopic dipole associated with chemisorption of Al or Ga on GaAs (110) have been obtained. These results are compared to experimental values and further experiments are suggested.

AB - An investigation was made of the initial stages of chemisorption of Al and Ga on the clean GaAs (110) surface by applying quantum chemical methods to small clusters representing Al or Ga on GaAs (110). These calculations suggest that at smallest coverages Al or Ga bind to a surface Ga atom; for higher coverages Al and the surface Ga interchange positions. The binding energy, the chemical shifts of the Ga-3d, As-3d and Al-2p states, and the microscopic dipole associated with chemisorption of Al or Ga on GaAs (110) have been obtained. These results are compared to experimental values and further experiments are suggested.

UR - https://www.scopus.com/pages/publications/0019056746

U2 - 10.1116/1.570607

DO - 10.1116/1.570607

M3 - Conference article

AN - SCOPUS:0019056746

VL - 17

SP - 869

EP - 873

JO - J Vac Sci Technol

JF - J Vac Sci Technol

IS - 5

T2 - Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 7th

Y2 - 29 January 1980 through 31 January 1980

ER -

CHEMISORPTION OF Al AND Ga ON THE GaAs (110) SURFACE.

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