Chirp tailoring in Q-switched InGaAsP lasers using electroabsorption loss section

B. Thedrez; J. M. Lourtioz; S. Bouchoule; C. Kazmierski

doi:10.1049/el:19961265

Chirp tailoring in Q-switched InGaAsP lasers using electroabsorption loss section

B. Thedrez, J. M. Lourtioz, S. Bouchoule, C. Kazmierski

Research output: Contribution to journal › Article › peer-review

Abstract

Chirp tailoring is demonstrated in Q-switched two-section InGaAsP lasers, with RF modulation applied to an electroabsorption section of high saturation intensity. The pulse time-bandwidth product is varied by a factor of ∼4, by changing the DC bias of the gain section. Pulses which are almost transform-limited are obtained for the lowest biases. Gain-switching experiments performed with the same lasers only show a moderate chirp dependence with bias. The authors give theoretical background to interprete the different behaviours.

Original language	English
Pages (from-to)	1886-1888
Number of pages	3
Journal	Electronics Letters
Volume	32
Issue number	20
DOIs	https://doi.org/10.1049/el:19961265
Publication status	Published - 1 Jan 1996

Keywords

Chirp
Electro-absorption modulators
Q-switching
Semiconductor junction lasers

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10.1049/el:19961265

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title = "Chirp tailoring in Q-switched InGaAsP lasers using electroabsorption loss section",

abstract = "Chirp tailoring is demonstrated in Q-switched two-section InGaAsP lasers, with RF modulation applied to an electroabsorption section of high saturation intensity. The pulse time-bandwidth product is varied by a factor of ∼4, by changing the DC bias of the gain section. Pulses which are almost transform-limited are obtained for the lowest biases. Gain-switching experiments performed with the same lasers only show a moderate chirp dependence with bias. The authors give theoretical background to interprete the different behaviours.",

keywords = "Chirp, Electro-absorption modulators, Q-switching, Semiconductor junction lasers",

author = "B. Thedrez and Lourtioz, \{J. M.\} and S. Bouchoule and C. Kazmierski",

year = "1996",

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doi = "10.1049/el:19961265",

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TY - JOUR

T1 - Chirp tailoring in Q-switched InGaAsP lasers using electroabsorption loss section

AU - Thedrez, B.

AU - Lourtioz, J. M.

AU - Bouchoule, S.

AU - Kazmierski, C.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Chirp tailoring is demonstrated in Q-switched two-section InGaAsP lasers, with RF modulation applied to an electroabsorption section of high saturation intensity. The pulse time-bandwidth product is varied by a factor of ∼4, by changing the DC bias of the gain section. Pulses which are almost transform-limited are obtained for the lowest biases. Gain-switching experiments performed with the same lasers only show a moderate chirp dependence with bias. The authors give theoretical background to interprete the different behaviours.

AB - Chirp tailoring is demonstrated in Q-switched two-section InGaAsP lasers, with RF modulation applied to an electroabsorption section of high saturation intensity. The pulse time-bandwidth product is varied by a factor of ∼4, by changing the DC bias of the gain section. Pulses which are almost transform-limited are obtained for the lowest biases. Gain-switching experiments performed with the same lasers only show a moderate chirp dependence with bias. The authors give theoretical background to interprete the different behaviours.

KW - Chirp

KW - Electro-absorption modulators

KW - Q-switching

KW - Semiconductor junction lasers

U2 - 10.1049/el:19961265

DO - 10.1049/el:19961265

M3 - Article

AN - SCOPUS:0030235618

SN - 0013-5194

VL - 32

SP - 1886

EP - 1888

JO - Electronics Letters

JF - Electronics Letters

IS - 20

ER -

Chirp tailoring in Q-switched InGaAsP lasers using electroabsorption loss section

Abstract

Keywords

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