Compact DC Modeling of organic field-effect transistors

Yvan Bonnassieux; Chang Hyun Kim; Gilles Horowitz

Compact DC Modeling of organic field-effect transistors

Yvan Bonnassieux
, Chang Hyun Kim
, Gilles Horowitz

Institut polytechnique de Paris

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this invited paper, we review recent progresses and future perspectives on physics-based compact modeling of organic field-effect transistors (OFETs). In spite of impressive improvements achieved for OFETs, there is still a lack of theoretical understanding of their behaviors. Furthermore, it is challenging to develop a universal model that would cover a huge variety of materials and device structures available for state-of-threat OFETs. Nonetheless, there is a strong need for specific.

Original language	English
Title of host publication	20th International Display Workshops 2013, IDW 2013
Publisher	International Display Workshops
Pages	1400-1402
Number of pages	3
ISBN (Electronic)	9781510827783
Publication status	Published - 1 Jan 2013
Event	20th International Display Workshops 2013, IDW 2013 - Sapporo, Japan Duration: 3 Dec 2013 → 6 Dec 2013

Publication series

Name	Proceedings of the International Display Workshops
Volume	2
ISSN (Print)	1883-2490

Conference

Conference	20th International Display Workshops 2013, IDW 2013
Country/Territory	Japan
City	Sapporo
Period	3/12/13 → 6/12/13

Keywords

OFET
OTFT
Organic electronic

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

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title = "Compact DC Modeling of organic field-effect transistors",

abstract = "In this invited paper, we review recent progresses and future perspectives on physics-based compact modeling of organic field-effect transistors (OFETs). In spite of impressive improvements achieved for OFETs, there is still a lack of theoretical understanding of their behaviors. Furthermore, it is challenging to develop a universal model that would cover a huge variety of materials and device structures available for state-of-threat OFETs. Nonetheless, there is a strong need for specific.",

keywords = "OFET, OTFT, Organic electronic",

author = "Yvan Bonnassieux and Kim, \{Chang Hyun\} and Gilles Horowitz",

note = "Publisher Copyright: {\textcopyright} 2013 ITE and SID.; 20th International Display Workshops 2013, IDW 2013 ; Conference date: 03-12-2013 Through 06-12-2013",

year = "2013",

month = jan,

day = "1",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "1400--1402",

booktitle = "20th International Display Workshops 2013, IDW 2013",

}

Compact DC Modeling of organic field-effect transistors. / Bonnassieux, Yvan; Kim, Chang Hyun; Horowitz, Gilles.
20th International Display Workshops 2013, IDW 2013. International Display Workshops, 2013. p. 1400-1402 (Proceedings of the International Display Workshops; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Compact DC Modeling of organic field-effect transistors

AU - Bonnassieux, Yvan

AU - Kim, Chang Hyun

AU - Horowitz, Gilles

PY - 2013/1/1

Y1 - 2013/1/1

N2 - In this invited paper, we review recent progresses and future perspectives on physics-based compact modeling of organic field-effect transistors (OFETs). In spite of impressive improvements achieved for OFETs, there is still a lack of theoretical understanding of their behaviors. Furthermore, it is challenging to develop a universal model that would cover a huge variety of materials and device structures available for state-of-threat OFETs. Nonetheless, there is a strong need for specific.

AB - In this invited paper, we review recent progresses and future perspectives on physics-based compact modeling of organic field-effect transistors (OFETs). In spite of impressive improvements achieved for OFETs, there is still a lack of theoretical understanding of their behaviors. Furthermore, it is challenging to develop a universal model that would cover a huge variety of materials and device structures available for state-of-threat OFETs. Nonetheless, there is a strong need for specific.

KW - OFET

KW - OTFT

KW - Organic electronic

M3 - Conference contribution

AN - SCOPUS:85026235447

T3 - Proceedings of the International Display Workshops

SP - 1400

EP - 1402

BT - 20th International Display Workshops 2013, IDW 2013

PB - International Display Workshops

T2 - 20th International Display Workshops 2013, IDW 2013

Y2 - 3 December 2013 through 6 December 2013

ER -

Compact DC Modeling of organic field-effect transistors

Abstract

Publication series

Conference

Keywords

UN SDGs

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