Comparative study of patterned TiO2 and Al2O3 layers as passivated back-contact for ultra-thin Cu(In,Ga)Se2 solar cells

F. Mollica; J. Goffard; M. Jubault; F. Donsanti; S. Collin; A. Cattoni; L. Lombez; N. Naghavi

doi:10.1109/PVSC.2017.8366505

Comparative study of patterned TiO₂ and Al₂O₃ layers as passivated back-contact for ultra-thin Cu(In,Ga)Se₂ solar cells

F. Mollica
, J. Goffard
, M. Jubault
, F. Donsanti
, S. Collin
, A. Cattoni
, L. Lombez
, N. Naghavi

Lamsid/EDF/R and D
Institut Photovoltaïque d'Ile-de-France
Centre de Nanosciences et de Nanotechnologies
Centre national de la recherche scientifique

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, a low cost passivated back-contact for ultra-thin Cu(In,Ga)Se₂-based (CIGS) solar cells to improve the carrier collection is developed. The current loss due to rear-interface recombination was first estimated with an accurate opto-electrical model. We compared the use of a sol-gel TiO₂ and an ALD-Al₂O₃ layer for the back-contact passivation. 400-420 nm CIGS cells were fabricated on the oxide/Mo substrate with point-contacts patterned by nanoimprint lithography. The use of a patterned-Mo/Al₂O₃ back-contact leads to an increase of the cell performance compared to the standard Mo back-contact. The passivation effect is discussed and is characterized by photoluminescence.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1594-1597
Number of pages	4
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366505
Publication status	Published - 1 Jan 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Conference

Conference	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	25/06/17 → 30/06/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Back-contact recombination
Charge carrier collection
Cu(In
Ga)Se
Nanoimprint
Passivation layer
Photoluminescence
Solar cells

Access to Document

10.1109/PVSC.2017.8366505

Cite this

Mollica, F., Goffard, J., Jubault, M., Donsanti, F., Collin, S., Cattoni, A., Lombez, L., & Naghavi, N. (2017). Comparative study of patterned TiO₂ and Al₂O₃ layers as passivated back-contact for ultra-thin Cu(In,Ga)Se₂ solar cells. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1594-1597). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366505

Mollica, F. ; Goffard, J. ; Jubault, M. et al. / Comparative study of patterned TiO₂ and Al₂O₃ layers as passivated back-contact for ultra-thin Cu(In,Ga)Se₂ solar cells. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1594-1597 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

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title = "Comparative study of patterned TiO2 and Al2O3 layers as passivated back-contact for ultra-thin Cu(In,Ga)Se2 solar cells",

abstract = "In this work, a low cost passivated back-contact for ultra-thin Cu(In,Ga)Se2-based (CIGS) solar cells to improve the carrier collection is developed. The current loss due to rear-interface recombination was first estimated with an accurate opto-electrical model. We compared the use of a sol-gel TiO2 and an ALD-Al2O3 layer for the back-contact passivation. 400-420 nm CIGS cells were fabricated on the oxide/Mo substrate with point-contacts patterned by nanoimprint lithography. The use of a patterned-Mo/Al2O3 back-contact leads to an increase of the cell performance compared to the standard Mo back-contact. The passivation effect is discussed and is characterized by photoluminescence.",

keywords = "Back-contact recombination, Charge carrier collection, Cu(In, Ga)Se, Nanoimprint, Passivation layer, Photoluminescence, Solar cells",

author = "F. Mollica and J. Goffard and M. Jubault and F. Donsanti and S. Collin and A. Cattoni and L. Lombez and N. Naghavi",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

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doi = "10.1109/PVSC.2017.8366505",

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Mollica, F, Goffard, J, Jubault, M, Donsanti, F, Collin, S, Cattoni, A, Lombez, L & Naghavi, N 2017, Comparative study of patterned TiO₂ and Al₂O₃ layers as passivated back-contact for ultra-thin Cu(In,Ga)Se₂ solar cells. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 1594-1597, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366505

Comparative study of patterned TiO₂ and Al₂O₃ layers as passivated back-contact for ultra-thin Cu(In,Ga)Se₂ solar cells. / Mollica, F.; Goffard, J.; Jubault, M. et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1594-1597 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Mollica, F.

AU - Goffard, J.

AU - Jubault, M.

AU - Donsanti, F.

AU - Collin, S.

AU - Cattoni, A.

AU - Lombez, L.

AU - Naghavi, N.

PY - 2017/1/1

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N2 - In this work, a low cost passivated back-contact for ultra-thin Cu(In,Ga)Se2-based (CIGS) solar cells to improve the carrier collection is developed. The current loss due to rear-interface recombination was first estimated with an accurate opto-electrical model. We compared the use of a sol-gel TiO2 and an ALD-Al2O3 layer for the back-contact passivation. 400-420 nm CIGS cells were fabricated on the oxide/Mo substrate with point-contacts patterned by nanoimprint lithography. The use of a patterned-Mo/Al2O3 back-contact leads to an increase of the cell performance compared to the standard Mo back-contact. The passivation effect is discussed and is characterized by photoluminescence.

AB - In this work, a low cost passivated back-contact for ultra-thin Cu(In,Ga)Se2-based (CIGS) solar cells to improve the carrier collection is developed. The current loss due to rear-interface recombination was first estimated with an accurate opto-electrical model. We compared the use of a sol-gel TiO2 and an ALD-Al2O3 layer for the back-contact passivation. 400-420 nm CIGS cells were fabricated on the oxide/Mo substrate with point-contacts patterned by nanoimprint lithography. The use of a patterned-Mo/Al2O3 back-contact leads to an increase of the cell performance compared to the standard Mo back-contact. The passivation effect is discussed and is characterized by photoluminescence.

KW - Back-contact recombination

KW - Charge carrier collection

KW - Cu(In

KW - Ga)Se

KW - Nanoimprint

KW - Passivation layer

KW - Photoluminescence

KW - Solar cells

U2 - 10.1109/PVSC.2017.8366505

DO - 10.1109/PVSC.2017.8366505

M3 - Conference contribution

AN - SCOPUS:85048465595

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 1594

EP - 1597

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

Y2 - 25 June 2017 through 30 June 2017

ER -

Mollica F, Goffard J, Jubault M, Donsanti F, Collin S, Cattoni A et al. Comparative study of patterned TiO₂ and Al₂O₃ layers as passivated back-contact for ultra-thin Cu(In,Ga)Se₂ solar cells. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1594-1597. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366505