Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD

  • Isidro Martin
  • , Delfina Muñoz
  • , Cristóbal Voz
  • , Michael Vetter
  • , Ramon Alcubilla
  • , Jerome Damon-Lacoste
  • , Pere Roca I Cabarrocas
  • , Fernando Villar
  • , Joan Bertomeu
  • , Jordi Andreu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we report on the last investigations of (n+) a-Si:H / (p) c-Si heterojunction solar cells deposited by both HWCVD and PECVD. Regarding HWCVD films, we use Spectroscopic Ellipsometry measurements to characterize the material properties of the deposited films. Particularly, we study the effect of the (i) a-Si:H film on the (n+) a-Si:H film growth. As far as PECVD films are concerned, an optimum PH3 flow is determined from the point of view of dark conductivity. Additionally, QSS-PC measurements are used to determine the improvement in the passivation quality of this film. Finally, HWCVD and PECVD HIT emitters are compared. A high quality in both emitters is deduced with implied Voc values exceeding 665 mV.

Original languageEnglish
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PublisherIEEE Computer Society
Pages1091-1094
Number of pages4
ISBN (Print)1424400163, 9781424400164
DOIs
Publication statusPublished - 1 Jan 2006
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: 7 May 200612 May 2006

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume1

Conference

Conference2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/TerritoryUnited States
CityWaikoloa, HI
Period7/05/0612/05/06

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