Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD

Isidro Martin; Delfina Muñoz; Cristóbal Voz; Michael Vetter; Ramon Alcubilla; Jerome Damon-Lacoste; Pere Roca I Cabarrocas; Fernando Villar; Joan Bertomeu; Jordi Andreu

doi:10.1109/WCPEC.2006.279332

Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD

Isidro Martin
, Delfina Muñoz
, Cristóbal Voz
, Michael Vetter
, Ramon Alcubilla
, Jerome Damon-Lacoste
, Pere Roca I Cabarrocas
, Fernando Villar
, Joan Bertomeu
, Jordi Andreu

Department d'Enginyeria Electrònica
Universidad Politecnica de Catalunia
Institut polytechnique de Paris
CeRMAE-Departament de Física Aplicada i Òptica
University of Barcelona

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

In this work, we report on the last investigations of (n+) a-Si:H / (p) c-Si heterojunction solar cells deposited by both HWCVD and PECVD. Regarding HWCVD films, we use Spectroscopic Ellipsometry measurements to characterize the material properties of the deposited films. Particularly, we study the effect of the (i) a-Si:H film on the (n+) a-Si:H film growth. As far as PECVD films are concerned, an optimum PH₃ flow is determined from the point of view of dark conductivity. Additionally, QSS-PC measurements are used to determine the improvement in the passivation quality of this film. Finally, HWCVD and PECVD HIT emitters are compared. A high quality in both emitters is deduced with implied V_oc values exceeding 665 mV.

Original language	English
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Publisher	IEEE Computer Society
Pages	1091-1094
Number of pages	4
ISBN (Print)	1424400163, 9781424400164
DOIs	https://doi.org/10.1109/WCPEC.2006.279332
Publication status	Published - 1 Jan 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	1

Conference

Conference	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	7/05/06 → 12/05/06

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1109/WCPEC.2006.279332

Cite this

Martin, I., Muñoz, D., Voz, C., Vetter, M., Alcubilla, R., Damon-Lacoste, J., Roca I Cabarrocas, P., Villar, F., Bertomeu, J., & Andreu, J. (2006). Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 1091-1094). Article 4059823 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279332

Martin, Isidro ; Muñoz, Delfina ; Voz, Cristóbal et al. / Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 1091-1094 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

@inproceedings{bf2eb74868424dd388ae375ebf0ea43d,

title = "Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD",

abstract = "In this work, we report on the last investigations of (n+) a-Si:H / (p) c-Si heterojunction solar cells deposited by both HWCVD and PECVD. Regarding HWCVD films, we use Spectroscopic Ellipsometry measurements to characterize the material properties of the deposited films. Particularly, we study the effect of the (i) a-Si:H film on the (n+) a-Si:H film growth. As far as PECVD films are concerned, an optimum PH3 flow is determined from the point of view of dark conductivity. Additionally, QSS-PC measurements are used to determine the improvement in the passivation quality of this film. Finally, HWCVD and PECVD HIT emitters are compared. A high quality in both emitters is deduced with implied Voc values exceeding 665 mV.",

author = "Isidro Martin and Delfina Mu{\~n}oz and Crist{\'o}bal Voz and Michael Vetter and Ramon Alcubilla and Jerome Damon-Lacoste and \{Roca I Cabarrocas\}, Pere and Fernando Villar and Joan Bertomeu and Jordi Andreu",

year = "2006",

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doi = "10.1109/WCPEC.2006.279332",

language = "English",

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series = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

publisher = "IEEE Computer Society",

pages = "1091--1094",

booktitle = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",

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Martin, I, Muñoz, D, Voz, C, Vetter, M, Alcubilla, R, Damon-Lacoste, J, Roca I Cabarrocas, P, Villar, F, Bertomeu, J & Andreu, J 2006, Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059823, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 1, IEEE Computer Society, pp. 1091-1094, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 7/05/06. https://doi.org/10.1109/WCPEC.2006.279332

Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD. / Martin, Isidro; Muñoz, Delfina; Voz, Cristóbal et al.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 1091-1094 4059823 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD

AU - Martin, Isidro

AU - Muñoz, Delfina

AU - Voz, Cristóbal

AU - Vetter, Michael

AU - Alcubilla, Ramon

AU - Damon-Lacoste, Jerome

AU - Roca I Cabarrocas, Pere

AU - Villar, Fernando

AU - Bertomeu, Joan

AU - Andreu, Jordi

PY - 2006/1/1

Y1 - 2006/1/1

N2 - In this work, we report on the last investigations of (n+) a-Si:H / (p) c-Si heterojunction solar cells deposited by both HWCVD and PECVD. Regarding HWCVD films, we use Spectroscopic Ellipsometry measurements to characterize the material properties of the deposited films. Particularly, we study the effect of the (i) a-Si:H film on the (n+) a-Si:H film growth. As far as PECVD films are concerned, an optimum PH3 flow is determined from the point of view of dark conductivity. Additionally, QSS-PC measurements are used to determine the improvement in the passivation quality of this film. Finally, HWCVD and PECVD HIT emitters are compared. A high quality in both emitters is deduced with implied Voc values exceeding 665 mV.

AB - In this work, we report on the last investigations of (n+) a-Si:H / (p) c-Si heterojunction solar cells deposited by both HWCVD and PECVD. Regarding HWCVD films, we use Spectroscopic Ellipsometry measurements to characterize the material properties of the deposited films. Particularly, we study the effect of the (i) a-Si:H film on the (n+) a-Si:H film growth. As far as PECVD films are concerned, an optimum PH3 flow is determined from the point of view of dark conductivity. Additionally, QSS-PC measurements are used to determine the improvement in the passivation quality of this film. Finally, HWCVD and PECVD HIT emitters are compared. A high quality in both emitters is deduced with implied Voc values exceeding 665 mV.

U2 - 10.1109/WCPEC.2006.279332

DO - 10.1109/WCPEC.2006.279332

M3 - Conference contribution

AN - SCOPUS:41749104854

SN - 1424400163

SN - 9781424400164

T3 - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

SP - 1091

EP - 1094

BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

PB - IEEE Computer Society

T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Y2 - 7 May 2006 through 12 May 2006

ER -

Martin I, Muñoz D, Voz C, Vetter M, Alcubilla R, Damon-Lacoste J et al. Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 1091-1094. 4059823. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). doi: 10.1109/WCPEC.2006.279332

Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD

Abstract

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