Conditions of elaboration of luminescent porous silicon from hydrogenated amorphous silicon

R. B. Wehrspohn; J. N. Chazalviel; F. Ozanam; I. Solomon

doi:10.1103/PhysRevLett.77.1885

Conditions of elaboration of luminescent porous silicon from hydrogenated amorphous silicon

R. B. Wehrspohn
, J. N. Chazalviel
, F. Ozanam
, I. Solomon

Research output: Contribution to journal › Article › peer-review

Abstract

We present a systematic study of the preparation and properties of porous silicon obtained by anodic etching of device-grade hydrogenated amorphous silicon. Highly luminescent porous material is produced from boron-doped films and, by hole injection, from undoped films. A striking difference between amorphous and crystalline Si lies in an electrochemical instability which limits the maximum obtainable thickness in porous material. The luminescence mechanism for porous a-Si:H appears to be markedly different from that of its crystalline counterpart.

Original language	English
Pages (from-to)	1885-1888
Number of pages	4
Journal	Physical Review Letters
Volume	77
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevLett.77.1885
Publication status	Published - 1 Jan 1996

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10.1103/PhysRevLett.77.1885

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title = "Conditions of elaboration of luminescent porous silicon from hydrogenated amorphous silicon",

abstract = "We present a systematic study of the preparation and properties of porous silicon obtained by anodic etching of device-grade hydrogenated amorphous silicon. Highly luminescent porous material is produced from boron-doped films and, by hole injection, from undoped films. A striking difference between amorphous and crystalline Si lies in an electrochemical instability which limits the maximum obtainable thickness in porous material. The luminescence mechanism for porous a-Si:H appears to be markedly different from that of its crystalline counterpart.",

author = "Wehrspohn, \{R. B.\} and Chazalviel, \{J. N.\} and F. Ozanam and I. Solomon",

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AU - Wehrspohn, R. B.

AU - Chazalviel, J. N.

AU - Ozanam, F.

AU - Solomon, I.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - We present a systematic study of the preparation and properties of porous silicon obtained by anodic etching of device-grade hydrogenated amorphous silicon. Highly luminescent porous material is produced from boron-doped films and, by hole injection, from undoped films. A striking difference between amorphous and crystalline Si lies in an electrochemical instability which limits the maximum obtainable thickness in porous material. The luminescence mechanism for porous a-Si:H appears to be markedly different from that of its crystalline counterpart.

AB - We present a systematic study of the preparation and properties of porous silicon obtained by anodic etching of device-grade hydrogenated amorphous silicon. Highly luminescent porous material is produced from boron-doped films and, by hole injection, from undoped films. A striking difference between amorphous and crystalline Si lies in an electrochemical instability which limits the maximum obtainable thickness in porous material. The luminescence mechanism for porous a-Si:H appears to be markedly different from that of its crystalline counterpart.

U2 - 10.1103/PhysRevLett.77.1885

DO - 10.1103/PhysRevLett.77.1885

M3 - Article

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SN - 0031-9007

VL - 77

SP - 1885

EP - 1888

JO - Physical Review Letters

JF - Physical Review Letters

IS - 9

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Conditions of elaboration of luminescent porous silicon from hydrogenated amorphous silicon

Abstract

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