Contactless electronic transport analysis of microcrystalline silicon

R. Brenot; R. Vanderhaghen; B. Drevillon; T. Mohammed-Brahim; P. Roca I Cabarrocas

doi:10.1016/S0040-6090(98)01185-7

Contactless electronic transport analysis of microcrystalline silicon

R. Brenot
, R. Vanderhaghen
, B. Drevillon
, T. Mohammed-Brahim
, P. Roca I Cabarrocas

Research output: Contribution to journal › Article › peer-review

Abstract

Electronic transport of microcrystalline silicon is analyzed by diffusion-induced time resolved microwave conductivity (DTRMC), a new contactless method based on time resolved microwave conductivity (TRMC) and related to the carrier diffusion in the analyzed sample. This method, associated with TRMC and with Hall measurement, is used to investigate the transport in microcrystalline silicon. The techniques are used to compare the mean longitudinal, the mean transversal and the local transport. Comparison of various samples illustrates the influence of film structure on the electronic transport.

Original language	English
Pages (from-to)	63-66
Number of pages	4
Journal	Thin Solid Films
Volume	337
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)01185-7
Publication status	Published - 11 Jan 1999

Keywords

Microcrystalline silicon
Transport

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10.1016/S0040-6090(98)01185-7

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title = "Contactless electronic transport analysis of microcrystalline silicon",

abstract = "Electronic transport of microcrystalline silicon is analyzed by diffusion-induced time resolved microwave conductivity (DTRMC), a new contactless method based on time resolved microwave conductivity (TRMC) and related to the carrier diffusion in the analyzed sample. This method, associated with TRMC and with Hall measurement, is used to investigate the transport in microcrystalline silicon. The techniques are used to compare the mean longitudinal, the mean transversal and the local transport. Comparison of various samples illustrates the influence of film structure on the electronic transport.",

keywords = "Microcrystalline silicon, Transport",

author = "R. Brenot and R. Vanderhaghen and B. Drevillon and T. Mohammed-Brahim and \{Roca I Cabarrocas\}, P.",

year = "1999",

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doi = "10.1016/S0040-6090(98)01185-7",

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T1 - Contactless electronic transport analysis of microcrystalline silicon

AU - Brenot, R.

AU - Vanderhaghen, R.

AU - Drevillon, B.

AU - Mohammed-Brahim, T.

AU - Roca I Cabarrocas, P.

PY - 1999/1/11

Y1 - 1999/1/11

N2 - Electronic transport of microcrystalline silicon is analyzed by diffusion-induced time resolved microwave conductivity (DTRMC), a new contactless method based on time resolved microwave conductivity (TRMC) and related to the carrier diffusion in the analyzed sample. This method, associated with TRMC and with Hall measurement, is used to investigate the transport in microcrystalline silicon. The techniques are used to compare the mean longitudinal, the mean transversal and the local transport. Comparison of various samples illustrates the influence of film structure on the electronic transport.

AB - Electronic transport of microcrystalline silicon is analyzed by diffusion-induced time resolved microwave conductivity (DTRMC), a new contactless method based on time resolved microwave conductivity (TRMC) and related to the carrier diffusion in the analyzed sample. This method, associated with TRMC and with Hall measurement, is used to investigate the transport in microcrystalline silicon. The techniques are used to compare the mean longitudinal, the mean transversal and the local transport. Comparison of various samples illustrates the influence of film structure on the electronic transport.

KW - Microcrystalline silicon

KW - Transport

U2 - 10.1016/S0040-6090(98)01185-7

DO - 10.1016/S0040-6090(98)01185-7

M3 - Article

AN - SCOPUS:0001835374

SN - 0040-6090

VL - 337

SP - 63

EP - 66

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Contactless electronic transport analysis of microcrystalline silicon

Abstract

Keywords

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