Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4m wavelength range around room temperature

L. Naehle; S. Belahsene; M. Von Edlinger; M. Fischer; G. Boissier; P. Grech; G. Narcy; A. Vicet; Y. Rouillard; J. Koeth; L. Worschech

doi:10.1049/el.2010.2733

Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4m wavelength range around room temperature

L. Naehle
, S. Belahsene
, M. Von Edlinger
, M. Fischer
, G. Boissier
, P. Grech
, G. Narcy
, A. Vicet
, Y. Rouillard
, J. Koeth
, L. Worschech

Research output: Contribution to journal › Article › peer-review

Abstract

Distributed feedback (DFB) laser diodes based on the concept of lateral metal gratings fabricated on type-I quantum well GaInAsSb/AlGaInAsSb material are presented. Monomode emission in the 3.4m wavelength range was achieved for the first time for a GaSb based DFB laser diode. Excellent sidemode suppression ratios beyond 30dB are demonstrated in combination with a modehop-free tuning range around 8.5nm. Using a specially developed polymer-free DFB processing route allowing improved heat dissipation, laser operation in continuous-wave mode was observed at temperatures up to around 20°C.

Original language	English
Pages (from-to)	46-47
Number of pages	2
Journal	Electronics Letters
Volume	47
Issue number	1
DOIs	https://doi.org/10.1049/el.2010.2733
Publication status	Published - 6 Jan 2011
Externally published	Yes

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10.1049/el.2010.2733

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title = "Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4m wavelength range around room temperature",

abstract = "Distributed feedback (DFB) laser diodes based on the concept of lateral metal gratings fabricated on type-I quantum well GaInAsSb/AlGaInAsSb material are presented. Monomode emission in the 3.4m wavelength range was achieved for the first time for a GaSb based DFB laser diode. Excellent sidemode suppression ratios beyond 30dB are demonstrated in combination with a modehop-free tuning range around 8.5nm. Using a specially developed polymer-free DFB processing route allowing improved heat dissipation, laser operation in continuous-wave mode was observed at temperatures up to around 20°C.",

author = "L. Naehle and S. Belahsene and Edlinger, \{M. Von\} and M. Fischer and G. Boissier and P. Grech and G. Narcy and A. Vicet and Y. Rouillard and J. Koeth and L. Worschech",

year = "2011",

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doi = "10.1049/el.2010.2733",

language = "English",

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journal = "Electronics Letters",

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TY - JOUR

T1 - Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4m wavelength range around room temperature

AU - Naehle, L.

AU - Belahsene, S.

AU - Edlinger, M. Von

AU - Fischer, M.

AU - Boissier, G.

AU - Grech, P.

AU - Narcy, G.

AU - Vicet, A.

AU - Rouillard, Y.

AU - Koeth, J.

AU - Worschech, L.

PY - 2011/1/6

Y1 - 2011/1/6

N2 - Distributed feedback (DFB) laser diodes based on the concept of lateral metal gratings fabricated on type-I quantum well GaInAsSb/AlGaInAsSb material are presented. Monomode emission in the 3.4m wavelength range was achieved for the first time for a GaSb based DFB laser diode. Excellent sidemode suppression ratios beyond 30dB are demonstrated in combination with a modehop-free tuning range around 8.5nm. Using a specially developed polymer-free DFB processing route allowing improved heat dissipation, laser operation in continuous-wave mode was observed at temperatures up to around 20°C.

AB - Distributed feedback (DFB) laser diodes based on the concept of lateral metal gratings fabricated on type-I quantum well GaInAsSb/AlGaInAsSb material are presented. Monomode emission in the 3.4m wavelength range was achieved for the first time for a GaSb based DFB laser diode. Excellent sidemode suppression ratios beyond 30dB are demonstrated in combination with a modehop-free tuning range around 8.5nm. Using a specially developed polymer-free DFB processing route allowing improved heat dissipation, laser operation in continuous-wave mode was observed at temperatures up to around 20°C.

UR - https://www.scopus.com/pages/publications/79957593205

U2 - 10.1049/el.2010.2733

DO - 10.1049/el.2010.2733

M3 - Article

AN - SCOPUS:79957593205

SN - 0013-5194

VL - 47

SP - 46

EP - 47

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4m wavelength range around room temperature

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