Control of the anisotropic exchange splitting of individual InAs/GaAs quantum dots with an in-plane electric field

K. Kowalik, O. Krebs, A. Lemaître, P. Senellart, J. Gaj, P. Voisin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present results of polarization-resolved micro-photoluminescence (μ-PL) experiments on self-organized InAs/GaAs quantum dots in presence of an in-plane electric field. The spectra reveal individual QD excitonic lines consisting of linearly polarized doublets (with a splitting up to ∼ 100 μeV). This splitting is due to the anisotropic electron-hole exchange interaction that lifts the degeneracy between the two optically active states. We examine how the external field acts on the excitonic fine structure, and conclude that it is possible to compensate the native anisotropic exchange splitting.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages717-718
Number of pages2
DOIs
Publication statusPublished - 30 Jun 2005
Externally publishedYes
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/TerritoryUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

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