CORE TO SURFACE EXCITATIONS ON GaAs(110).

C. A. Swarts; W. A. Goddard; T. C. McGill

doi:10.1116/1.571064

CORE TO SURFACE EXCITATIONS ON GaAs(110).

C. A. Swarts
, W. A. Goddard
, T. C. McGill

Research output: Contribution to journal › Conference article › peer-review

Abstract

The authors have carried out ab initio calculations of surface core excitations on finite cluster models of the GaAs(110) surface. For the Ga core excitation the authors find a localized excited state involving excitation into the empty Ga-4p orbital and bound with respect to the conduction band minimum (CBM) by 0. 7 ev. This is in reasonable agreement with experiment (binding energy APP GRTH 0. 8 ev). This transition, which is not analogous to bulk core excitations, is termed a core surfaston to emphasize the character of the state. It is found that the As core surfaston is above the CBM by 1. 0 ev and hence should be difficult to observe.

Original language	English
Pages (from-to)	360-366
Number of pages	7
Journal	J Vac Sci Technol
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.571064
Publication status	Published - 1 Jan 1981
Externally published	Yes
Event	Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA Duration: 27 Jan 1981 → 29 Jan 1981

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title = "CORE TO SURFACE EXCITATIONS ON GaAs(110).",

abstract = "The authors have carried out ab initio calculations of surface core excitations on finite cluster models of the GaAs(110) surface. For the Ga core excitation the authors find a localized excited state involving excitation into the empty Ga-4p orbital and bound with respect to the conduction band minimum (CBM) by 0. 7 ev. This is in reasonable agreement with experiment (binding energy APP GRTH 0. 8 ev). This transition, which is not analogous to bulk core excitations, is termed a core surfaston to emphasize the character of the state. It is found that the As core surfaston is above the CBM by 1. 0 ev and hence should be difficult to observe.",

author = "Swarts, \{C. A.\} and Goddard, \{W. A.\} and McGill, \{T. C.\}",

year = "1981",

month = jan,

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doi = "10.1116/1.571064",

language = "English",

volume = "19",

pages = "360--366",

journal = "J Vac Sci Technol",

number = "3",

note = "Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th ; Conference date: 27-01-1981 Through 29-01-1981",

}

TY - JOUR

T1 - CORE TO SURFACE EXCITATIONS ON GaAs(110).

AU - Swarts, C. A.

AU - Goddard, W. A.

AU - McGill, T. C.

PY - 1981/1/1

Y1 - 1981/1/1

N2 - The authors have carried out ab initio calculations of surface core excitations on finite cluster models of the GaAs(110) surface. For the Ga core excitation the authors find a localized excited state involving excitation into the empty Ga-4p orbital and bound with respect to the conduction band minimum (CBM) by 0. 7 ev. This is in reasonable agreement with experiment (binding energy APP GRTH 0. 8 ev). This transition, which is not analogous to bulk core excitations, is termed a core surfaston to emphasize the character of the state. It is found that the As core surfaston is above the CBM by 1. 0 ev and hence should be difficult to observe.

AB - The authors have carried out ab initio calculations of surface core excitations on finite cluster models of the GaAs(110) surface. For the Ga core excitation the authors find a localized excited state involving excitation into the empty Ga-4p orbital and bound with respect to the conduction band minimum (CBM) by 0. 7 ev. This is in reasonable agreement with experiment (binding energy APP GRTH 0. 8 ev). This transition, which is not analogous to bulk core excitations, is termed a core surfaston to emphasize the character of the state. It is found that the As core surfaston is above the CBM by 1. 0 ev and hence should be difficult to observe.

UR - https://www.scopus.com/pages/publications/0019608185

U2 - 10.1116/1.571064

DO - 10.1116/1.571064

M3 - Conference article

AN - SCOPUS:0019608185

VL - 19

SP - 360

EP - 366

JO - J Vac Sci Technol

JF - J Vac Sci Technol

IS - 3

T2 - Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th

Y2 - 27 January 1981 through 29 January 1981

ER -

CORE TO SURFACE EXCITATIONS ON GaAs(110).

Abstract

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