Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells

S. Almosni; P. Rale; C. Cornet; M. Perrin; L. Lombez; A. Létoublon; K. Tavernier; C. Levallois; T. Rohel; N. Bertru; J. F. Guillemoles; O. Durand

doi:10.1016/j.solmat.2015.11.036

Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells

S. Almosni
, P. Rale
, C. Cornet
, M. Perrin
, L. Lombez
, A. Létoublon
, K. Tavernier
, C. Levallois
, T. Rohel
, N. Bertru
, J. F. Guillemoles
, O. Durand

Research output: Contribution to journal › Article › peer-review

Abstract

In this workwe investigate correlations between optical and electro-optical properties of GaAsPN/GaP p-i-n solar cells grown by MBE on GaP(001) substrates. A photoluminescence model is first proposed to extract the long range compositional fluctuation energy scale from low temperature photoluminescence spectra of the GaAsPN dilute-nitride material. Solar cells grown with the same nitrogen content at different temperature reveal very different electrical performances. A 4.08 mA/cm² short-circuit current density has been obtainedthat is an excellent value given the small absorber thickness (300 nm) and high material bandgap. Comparisons between solar cells photoluminescenceI-V (under AM1.5G illumination) and IQE parameters reveal correlations between their optical and electrical parameters. These results reinforce PL measurements interest for dilute nitride solar cells growth optimization.

Original language	English
Pages (from-to)	53-60
Number of pages	8
Journal	Solar Energy Materials and Solar Cells
Volume	147
DOIs	https://doi.org/10.1016/j.solmat.2015.11.036
Publication status	Published - 1 Apr 2016

Keywords

Molecular beam epitaxy
Photoluminescence
Solar cells
X-ray diffraction

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2015.11.036

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title = "Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells",

abstract = "In this workwe investigate correlations between optical and electro-optical properties of GaAsPN/GaP p-i-n solar cells grown by MBE on GaP(001) substrates. A photoluminescence model is first proposed to extract the long range compositional fluctuation energy scale from low temperature photoluminescence spectra of the GaAsPN dilute-nitride material. Solar cells grown with the same nitrogen content at different temperature reveal very different electrical performances. A 4.08 mA/cm2 short-circuit current density has been obtainedthat is an excellent value given the small absorber thickness (300 nm) and high material bandgap. Comparisons between solar cells photoluminescenceI-V (under AM1.5G illumination) and IQE parameters reveal correlations between their optical and electrical parameters. These results reinforce PL measurements interest for dilute nitride solar cells growth optimization.",

keywords = "Molecular beam epitaxy, Photoluminescence, Solar cells, X-ray diffraction",

author = "S. Almosni and P. Rale and C. Cornet and M. Perrin and L. Lombez and A. L{\'e}toublon and K. Tavernier and C. Levallois and T. Rohel and N. Bertru and Guillemoles, \{J. F.\} and O. Durand",

year = "2016",

month = apr,

day = "1",

doi = "10.1016/j.solmat.2015.11.036",

language = "English",

volume = "147",

pages = "53--60",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

}

TY - JOUR

T1 - Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells

AU - Almosni, S.

AU - Rale, P.

AU - Cornet, C.

AU - Perrin, M.

AU - Lombez, L.

AU - Létoublon, A.

AU - Tavernier, K.

AU - Levallois, C.

AU - Rohel, T.

AU - Bertru, N.

AU - Guillemoles, J. F.

AU - Durand, O.

PY - 2016/4/1

Y1 - 2016/4/1

N2 - In this workwe investigate correlations between optical and electro-optical properties of GaAsPN/GaP p-i-n solar cells grown by MBE on GaP(001) substrates. A photoluminescence model is first proposed to extract the long range compositional fluctuation energy scale from low temperature photoluminescence spectra of the GaAsPN dilute-nitride material. Solar cells grown with the same nitrogen content at different temperature reveal very different electrical performances. A 4.08 mA/cm2 short-circuit current density has been obtainedthat is an excellent value given the small absorber thickness (300 nm) and high material bandgap. Comparisons between solar cells photoluminescenceI-V (under AM1.5G illumination) and IQE parameters reveal correlations between their optical and electrical parameters. These results reinforce PL measurements interest for dilute nitride solar cells growth optimization.

AB - In this workwe investigate correlations between optical and electro-optical properties of GaAsPN/GaP p-i-n solar cells grown by MBE on GaP(001) substrates. A photoluminescence model is first proposed to extract the long range compositional fluctuation energy scale from low temperature photoluminescence spectra of the GaAsPN dilute-nitride material. Solar cells grown with the same nitrogen content at different temperature reveal very different electrical performances. A 4.08 mA/cm2 short-circuit current density has been obtainedthat is an excellent value given the small absorber thickness (300 nm) and high material bandgap. Comparisons between solar cells photoluminescenceI-V (under AM1.5G illumination) and IQE parameters reveal correlations between their optical and electrical parameters. These results reinforce PL measurements interest for dilute nitride solar cells growth optimization.

KW - Molecular beam epitaxy

KW - Photoluminescence

KW - Solar cells

KW - X-ray diffraction

U2 - 10.1016/j.solmat.2015.11.036

DO - 10.1016/j.solmat.2015.11.036

M3 - Article

AN - SCOPUS:84949975348

SN - 0927-0248

VL - 147

SP - 53

EP - 60

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells

Abstract

Keywords

UN SDGs

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