CO2 laser-induced crystallization of sol-gel-derived indium tin oxide films

X. Y. Tao; I. Fsaifes; V. Koncar; C. Dufour; C. Lepers; L. Hay; B. Capoen; M. Bouazaoui

doi:10.1007/s00339-009-5157-7

CO₂ laser-induced crystallization of sol-gel-derived indium tin oxide films

X. Y. Tao, I. Fsaifes, V. Koncar, C. Dufour, C. Lepers, L. Hay, B. Capoen, M. Bouazaoui

Research output: Contribution to journal › Article › peer-review

Abstract

Indium tin oxide (ITO) thin films prepared by the sol-gel method have been deposited by the dip-coating process on silica substrates. CO₂ laser is used for annealing treatments. The electrical resistivity of sol-gel-derived ITO thin films decreased following crystallization after exposure to CO ₂ laser beam. The topological and electrical properties of the irradiated surfaces have been demonstrated to be strongly related to the coating solution and to the laser processing parameters. Optimal results have been obtained for 5 dip-coating layers film from 0.4 mol/l solution irradiated by 0.6 W/m² laser power density. In this case, homogeneous and optically transparent traces were obtained with a measured sheet resistance of 1.46×10² Ω/□.

Original language	English
Pages (from-to)	741-749
Number of pages	9
Journal	Applied Physics A: Materials Science and Processing
Volume	96
Issue number	3
DOIs	https://doi.org/10.1007/s00339-009-5157-7
Publication status	Published - 1 Aug 2009
Externally published	Yes

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title = "CO2 laser-induced crystallization of sol-gel-derived indium tin oxide films",

abstract = "Indium tin oxide (ITO) thin films prepared by the sol-gel method have been deposited by the dip-coating process on silica substrates. CO2 laser is used for annealing treatments. The electrical resistivity of sol-gel-derived ITO thin films decreased following crystallization after exposure to CO 2 laser beam. The topological and electrical properties of the irradiated surfaces have been demonstrated to be strongly related to the coating solution and to the laser processing parameters. Optimal results have been obtained for 5 dip-coating layers film from 0.4 mol/l solution irradiated by 0.6 W/m2 laser power density. In this case, homogeneous and optically transparent traces were obtained with a measured sheet resistance of 1.46×102 Ω/□.",

author = "Tao, \{X. Y.\} and I. Fsaifes and V. Koncar and C. Dufour and C. Lepers and L. Hay and B. Capoen and M. Bouazaoui",

year = "2009",

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doi = "10.1007/s00339-009-5157-7",

language = "English",

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journal = "Applied Physics A: Materials Science and Processing",

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TY - JOUR

T1 - CO2 laser-induced crystallization of sol-gel-derived indium tin oxide films

AU - Tao, X. Y.

AU - Fsaifes, I.

AU - Koncar, V.

AU - Dufour, C.

AU - Lepers, C.

AU - Hay, L.

AU - Capoen, B.

AU - Bouazaoui, M.

PY - 2009/8/1

Y1 - 2009/8/1

N2 - Indium tin oxide (ITO) thin films prepared by the sol-gel method have been deposited by the dip-coating process on silica substrates. CO2 laser is used for annealing treatments. The electrical resistivity of sol-gel-derived ITO thin films decreased following crystallization after exposure to CO 2 laser beam. The topological and electrical properties of the irradiated surfaces have been demonstrated to be strongly related to the coating solution and to the laser processing parameters. Optimal results have been obtained for 5 dip-coating layers film from 0.4 mol/l solution irradiated by 0.6 W/m2 laser power density. In this case, homogeneous and optically transparent traces were obtained with a measured sheet resistance of 1.46×102 Ω/□.

AB - Indium tin oxide (ITO) thin films prepared by the sol-gel method have been deposited by the dip-coating process on silica substrates. CO2 laser is used for annealing treatments. The electrical resistivity of sol-gel-derived ITO thin films decreased following crystallization after exposure to CO 2 laser beam. The topological and electrical properties of the irradiated surfaces have been demonstrated to be strongly related to the coating solution and to the laser processing parameters. Optimal results have been obtained for 5 dip-coating layers film from 0.4 mol/l solution irradiated by 0.6 W/m2 laser power density. In this case, homogeneous and optically transparent traces were obtained with a measured sheet resistance of 1.46×102 Ω/□.

U2 - 10.1007/s00339-009-5157-7

DO - 10.1007/s00339-009-5157-7

M3 - Article

AN - SCOPUS:67651243884

SN - 0947-8396

VL - 96

SP - 741

EP - 749

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 3

ER -

CO2 laser-induced crystallization of sol-gel-derived indium tin oxide films

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CO₂ laser-induced crystallization of sol-gel-derived indium tin oxide films