Abstract
Photovoltaic cells based on chalcogenides CIGS (Cu(In,Ga)Se2) thin films are a very promising technology. To improve cells performances, a fine optimization of the CIGS absorber properties is needed. Hence, we developed a cross strategy method combining the surface, volume and specific interfaces of the final device characterizations. These features deal with a large panel of physico-chemical techniques for the chemical composition (XPS, EDS, ICP-OES, GD-OES, AES), the morphology (SEM, AFM) and the optical parameters (spectroscopic ellipsometry) determination. This article demonstrates the crucial interest of this cross strategy on CIGS absorbers and focus on the accuracy and complementarities of each technique.
| Original language | English |
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| Title of host publication | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 2836-2838 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781509056057 |
| DOIs | |
| Publication status | Published - 1 Jan 2017 |
| Event | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017 |
Publication series
| Name | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
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Conference
| Conference | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 |
|---|---|
| Country/Territory | United States |
| City | Washington |
| Period | 25/06/17 → 30/06/17 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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