Cross strategy of surface and volume characterizations of chalcogenides thin films: Practical case of CIGS absorbers

Anais Loubat; Fabien Mollica; Celine Eypert; Muriel Bouttemy; Damien Aureau; Jackie Vigneron; Sofia Gaiaschi; Negar Naghavi; Marie Jubault; Frederique Donsanti; Patrick Chapon; Daniel Lincot; Arnaud Etcheberry

doi:10.1109/PVSC.2016.7749633

Cross strategy of surface and volume characterizations of chalcogenides thin films: Practical case of CIGS absorbers

Anais Loubat, Fabien Mollica, Celine Eypert, Muriel Bouttemy, Damien Aureau, Jackie Vigneron, Sofia Gaiaschi, Negar Naghavi, Marie Jubault, Frederique Donsanti, Patrick Chapon, Daniel Lincot, Arnaud Etcheberry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Photovoltaic cells based on chalcogenides CIGS (Cu(In, Ga)Se₂) thin films are a very promising technology. To improve cells performances, a fine optimization of the CIGS absorber properties is needed. Hence, we developed a cross strategy method combining the surface, volume and specific interfaces of the final device characterizations. These features deal with a large panel of physico-chemical techniques for the chemical composition (XPS, EDS, ICP-OES, GD-OES, AES), the morphology (SEM, AFM) and the optical parameters (spectroscopic ellipsometry) determination. This article demonstrates the crucial interest of this cross strategy on CIGS absorbers and focus on the accuracy and complementarities of each technique.

Original language	English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	454-456
Number of pages	3
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749633
Publication status	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2016.7749633

Cite this

Loubat, A., Mollica, F., Eypert, C., Bouttemy, M., Aureau, D., Vigneron, J., Gaiaschi, S., Naghavi, N., Jubault, M., Donsanti, F., Chapon, P., Lincot, D., & Etcheberry, A. (2016). Cross strategy of surface and volume characterizations of chalcogenides thin films: Practical case of CIGS absorbers. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 454-456). Article 7749633 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749633

Loubat, Anais ; Mollica, Fabien ; Eypert, Celine et al. / Cross strategy of surface and volume characterizations of chalcogenides thin films : Practical case of CIGS absorbers. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 454-456 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{f30f2577630c4b60b25fae85148f560e,

title = "Cross strategy of surface and volume characterizations of chalcogenides thin films: Practical case of CIGS absorbers",

abstract = "Photovoltaic cells based on chalcogenides CIGS (Cu(In, Ga)Se2) thin films are a very promising technology. To improve cells performances, a fine optimization of the CIGS absorber properties is needed. Hence, we developed a cross strategy method combining the surface, volume and specific interfaces of the final device characterizations. These features deal with a large panel of physico-chemical techniques for the chemical composition (XPS, EDS, ICP-OES, GD-OES, AES), the morphology (SEM, AFM) and the optical parameters (spectroscopic ellipsometry) determination. This article demonstrates the crucial interest of this cross strategy on CIGS absorbers and focus on the accuracy and complementarities of each technique.",

author = "Anais Loubat and Fabien Mollica and Celine Eypert and Muriel Bouttemy and Damien Aureau and Jackie Vigneron and Sofia Gaiaschi and Negar Naghavi and Marie Jubault and Frederique Donsanti and Patrick Chapon and Daniel Lincot and Arnaud Etcheberry",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7749633",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "454--456",

booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",

}

Loubat, A, Mollica, F, Eypert, C, Bouttemy, M, Aureau, D, Vigneron, J, Gaiaschi, S, Naghavi, N, Jubault, M, Donsanti, F, Chapon, P, Lincot, D & Etcheberry, A 2016, Cross strategy of surface and volume characterizations of chalcogenides thin films: Practical case of CIGS absorbers. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749633, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 454-456, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16. https://doi.org/10.1109/PVSC.2016.7749633

Cross strategy of surface and volume characterizations of chalcogenides thin films: Practical case of CIGS absorbers. / Loubat, Anais; Mollica, Fabien; Eypert, Celine et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 454-456 7749633 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Cross strategy of surface and volume characterizations of chalcogenides thin films

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

AU - Loubat, Anais

AU - Mollica, Fabien

AU - Eypert, Celine

AU - Bouttemy, Muriel

AU - Aureau, Damien

AU - Vigneron, Jackie

AU - Gaiaschi, Sofia

AU - Naghavi, Negar

AU - Jubault, Marie

AU - Donsanti, Frederique

AU - Chapon, Patrick

AU - Lincot, Daniel

AU - Etcheberry, Arnaud

PY - 2016/11/18

Y1 - 2016/11/18

N2 - Photovoltaic cells based on chalcogenides CIGS (Cu(In, Ga)Se2) thin films are a very promising technology. To improve cells performances, a fine optimization of the CIGS absorber properties is needed. Hence, we developed a cross strategy method combining the surface, volume and specific interfaces of the final device characterizations. These features deal with a large panel of physico-chemical techniques for the chemical composition (XPS, EDS, ICP-OES, GD-OES, AES), the morphology (SEM, AFM) and the optical parameters (spectroscopic ellipsometry) determination. This article demonstrates the crucial interest of this cross strategy on CIGS absorbers and focus on the accuracy and complementarities of each technique.

AB - Photovoltaic cells based on chalcogenides CIGS (Cu(In, Ga)Se2) thin films are a very promising technology. To improve cells performances, a fine optimization of the CIGS absorber properties is needed. Hence, we developed a cross strategy method combining the surface, volume and specific interfaces of the final device characterizations. These features deal with a large panel of physico-chemical techniques for the chemical composition (XPS, EDS, ICP-OES, GD-OES, AES), the morphology (SEM, AFM) and the optical parameters (spectroscopic ellipsometry) determination. This article demonstrates the crucial interest of this cross strategy on CIGS absorbers and focus on the accuracy and complementarities of each technique.

U2 - 10.1109/PVSC.2016.7749633

DO - 10.1109/PVSC.2016.7749633

M3 - Conference contribution

AN - SCOPUS:85003587623

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 454

EP - 456

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 5 June 2016 through 10 June 2016

ER -

Loubat A, Mollica F, Eypert C, Bouttemy M, Aureau D, Vigneron J et al. Cross strategy of surface and volume characterizations of chalcogenides thin films: Practical case of CIGS absorbers. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 454-456. 7749633. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7749633

Cross strategy of surface and volume characterizations of chalcogenides thin films: Practical case of CIGS absorbers

Abstract

Publication series

Conference

UN SDGs

Access to Document

Fingerprint

Cite this