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Crystallization behavior of Cu2ZnSn(Sx, Se1-x)4 absorbers processed from sputtered Cu2ZnSnS4 precursors under different selenization conditions

  • Institut Photovoltaïque d'Ile-de-France

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

In this work, we study the crystallization behavior of Cu2ZnSn(SxSe1-x)4 in annealing conditions. Cu-Zn-Sn-S precursors are deposited on glass/Mo substrate by a cosputtering of Cu, ZnS, and SnS. In order to have a better understanding of annealing on the mechanisms of formation of CZTSSe and secondary phases, these precursors are annealed at different temperatures (250°C <T<600°C), duration (1 to 60 min) and Se quantity. Efficiencies up to 7% are obtained. Material and diode properties are extracted from chemical, structural and opto-electronic characterization.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2425-2427
Number of pages3
ISBN (Electronic)9781479943982
DOIs
Publication statusPublished - 15 Oct 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Conference

Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States
CityDenver
Period8/06/1413/06/14

Keywords

  • CuZnSn(S,Se)
  • annealing
  • kesterite

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