Cu(In,Ga)Se2 mesa microdiodes: Study of edge recombination and behaviour under concentrated sunlight

M. Paire; C. Jean; L. Lombez; S. Collin; J. L. Pelouard; D. Lincot; J. F. Guillemoles

doi:10.1117/12.2039579

Cu(In,Ga)Se₂ mesa microdiodes: Study of edge recombination and behaviour under concentrated sunlight

M. Paire
, C. Jean
, L. Lombez
, S. Collin
, J. L. Pelouard
, D. Lincot
, J. F. Guillemoles

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In order to develop photovoltaic devices with increased efficiency using less rare semiconductor materials, the concentrating approach is applied on Cu(In,Ga)Se2 thin film devices. For this purpose, Cu(In,Ga)Se2 microcells with a mesa design are fabricated. The influence of the edge recombination signal is analyzed. It is found that with an appropriate etching procedure, devices as small as 50x50 Im do not experience edge recombination efficiency limitations. Under concentration, significant Voc gains are seen, leading to an absolute efficiency increase of two points per decade.

Original language	English
Title of host publication	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III
Publisher	SPIE
ISBN (Print)	9780819498946
DOIs	https://doi.org/10.1117/12.2039579
Publication status	Published - 1 Jan 2014
Event	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III - San Francisco, CA, United States Duration: 3 Feb 2014 → 6 Feb 2014

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8981
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III
Country/Territory	United States
City	San Francisco, CA
Period	3/02/14 → 6/02/14

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Concentration
Cu(In
Edge recombination
Ga)Se2
Mesa diodes
Microcell
Thin film

Access to Document

10.1117/12.2039579

Cite this

Paire, M., Jean, C., Lombez, L., Collin, S., Pelouard, J. L., Lincot, D., & Guillemoles, J. F. (2014). Cu(In,Ga)Se₂ mesa microdiodes: Study of edge recombination and behaviour under concentrated sunlight. In Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III Article 89810Z (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8981). SPIE. https://doi.org/10.1117/12.2039579

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title = "Cu(In,Ga)Se2 mesa microdiodes: Study of edge recombination and behaviour under concentrated sunlight",

abstract = "In order to develop photovoltaic devices with increased efficiency using less rare semiconductor materials, the concentrating approach is applied on Cu(In,Ga)Se2 thin film devices. For this purpose, Cu(In,Ga)Se2 microcells with a mesa design are fabricated. The influence of the edge recombination signal is analyzed. It is found that with an appropriate etching procedure, devices as small as 50x50 Im do not experience edge recombination efficiency limitations. Under concentration, significant Voc gains are seen, leading to an absolute efficiency increase of two points per decade.",

keywords = "Concentration, Cu(In, Edge recombination, Ga)Se2, Mesa diodes, Microcell, Thin film",

author = "M. Paire and C. Jean and L. Lombez and S. Collin and Pelouard, \{J. L.\} and D. Lincot and Guillemoles, \{J. F.\}",

year = "2014",

month = jan,

day = "1",

doi = "10.1117/12.2039579",

language = "English",

isbn = "9780819498946",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

booktitle = "Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III",

note = "Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III ; Conference date: 03-02-2014 Through 06-02-2014",

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Paire, M, Jean, C, Lombez, L, Collin, S, Pelouard, JL, Lincot, D & Guillemoles, JF 2014, Cu(In,Ga)Se₂ mesa microdiodes: Study of edge recombination and behaviour under concentrated sunlight. in Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III., 89810Z, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8981, SPIE, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, San Francisco, CA, United States, 3/02/14. https://doi.org/10.1117/12.2039579

Cu(In,Ga)Se₂ mesa microdiodes: Study of edge recombination and behaviour under concentrated sunlight. / Paire, M.; Jean, C.; Lombez, L. et al.
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III. SPIE, 2014. 89810Z (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8981).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Paire, M.

AU - Jean, C.

AU - Lombez, L.

AU - Collin, S.

AU - Pelouard, J. L.

AU - Lincot, D.

AU - Guillemoles, J. F.

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N2 - In order to develop photovoltaic devices with increased efficiency using less rare semiconductor materials, the concentrating approach is applied on Cu(In,Ga)Se2 thin film devices. For this purpose, Cu(In,Ga)Se2 microcells with a mesa design are fabricated. The influence of the edge recombination signal is analyzed. It is found that with an appropriate etching procedure, devices as small as 50x50 Im do not experience edge recombination efficiency limitations. Under concentration, significant Voc gains are seen, leading to an absolute efficiency increase of two points per decade.

AB - In order to develop photovoltaic devices with increased efficiency using less rare semiconductor materials, the concentrating approach is applied on Cu(In,Ga)Se2 thin film devices. For this purpose, Cu(In,Ga)Se2 microcells with a mesa design are fabricated. The influence of the edge recombination signal is analyzed. It is found that with an appropriate etching procedure, devices as small as 50x50 Im do not experience edge recombination efficiency limitations. Under concentration, significant Voc gains are seen, leading to an absolute efficiency increase of two points per decade.

KW - Concentration

KW - Cu(In

KW - Edge recombination

KW - Ga)Se2

KW - Mesa diodes

KW - Microcell

KW - Thin film

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M3 - Conference contribution

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