Current-induced and light-induced macroscopic changes in thin film solar cells: Device degradation mechanism

Ka Hyun Kim; Erik V. Johnson; Pere Roca i Cabarrocas

doi:10.1016/j.solener.2016.12.030

Current-induced and light-induced macroscopic changes in thin film solar cells: Device degradation mechanism

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the formation of large voids in hydrogenated polymorphous silicon (pm-Si:H) PIN solar cells upon light-soaking. We could monitor in situ, the formation of macroscopic bubbles and holes during current-induced degradation of the same devices using optical microscopy. Forward bias, leading to a current-injection of 300 mA/cm², was applied to hydrogenated amorphous silicon (a-Si:H) and pm-Si:H PIN solar cells and series of optical images were taken on the same spot at various steps of current-injection. During the current-injection, the pm-Si:H PIN solar cells experience significant topological changes, which we could not detect in a-Si:H PIN solar cells. These effects were further characterized by complementary ex-situ techniques such as SEM, AFM and spectroscopic ellipsometry.

Original language	English
Pages (from-to)	86-92
Number of pages	7
Journal	Solar Energy
Volume	143
DOIs	https://doi.org/10.1016/j.solener.2016.12.030
Publication status	Published - 1 Jan 2017
Externally published	Yes

Keywords

Characterization of defects in PV
Hydrogen
Light-induced degradation
Silicon nanocrystals

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solener.2016.12.030

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title = "Current-induced and light-induced macroscopic changes in thin film solar cells: Device degradation mechanism",

abstract = "We report on the formation of large voids in hydrogenated polymorphous silicon (pm-Si:H) PIN solar cells upon light-soaking. We could monitor in situ, the formation of macroscopic bubbles and holes during current-induced degradation of the same devices using optical microscopy. Forward bias, leading to a current-injection of 300 mA/cm2, was applied to hydrogenated amorphous silicon (a-Si:H) and pm-Si:H PIN solar cells and series of optical images were taken on the same spot at various steps of current-injection. During the current-injection, the pm-Si:H PIN solar cells experience significant topological changes, which we could not detect in a-Si:H PIN solar cells. These effects were further characterized by complementary ex-situ techniques such as SEM, AFM and spectroscopic ellipsometry.",

keywords = "Characterization of defects in PV, Hydrogen, Light-induced degradation, Silicon nanocrystals",

author = "Kim, \{Ka Hyun\} and Johnson, \{Erik V.\} and \{Roca i Cabarrocas\}, Pere",

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year = "2017",

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doi = "10.1016/j.solener.2016.12.030",

language = "English",

volume = "143",

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journal = "Solar Energy",

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TY - JOUR

T1 - Current-induced and light-induced macroscopic changes in thin film solar cells

T2 - Device degradation mechanism

AU - Kim, Ka Hyun

AU - Johnson, Erik V.

AU - Roca i Cabarrocas, Pere

PY - 2017/1/1

Y1 - 2017/1/1

N2 - We report on the formation of large voids in hydrogenated polymorphous silicon (pm-Si:H) PIN solar cells upon light-soaking. We could monitor in situ, the formation of macroscopic bubbles and holes during current-induced degradation of the same devices using optical microscopy. Forward bias, leading to a current-injection of 300 mA/cm2, was applied to hydrogenated amorphous silicon (a-Si:H) and pm-Si:H PIN solar cells and series of optical images were taken on the same spot at various steps of current-injection. During the current-injection, the pm-Si:H PIN solar cells experience significant topological changes, which we could not detect in a-Si:H PIN solar cells. These effects were further characterized by complementary ex-situ techniques such as SEM, AFM and spectroscopic ellipsometry.

AB - We report on the formation of large voids in hydrogenated polymorphous silicon (pm-Si:H) PIN solar cells upon light-soaking. We could monitor in situ, the formation of macroscopic bubbles and holes during current-induced degradation of the same devices using optical microscopy. Forward bias, leading to a current-injection of 300 mA/cm2, was applied to hydrogenated amorphous silicon (a-Si:H) and pm-Si:H PIN solar cells and series of optical images were taken on the same spot at various steps of current-injection. During the current-injection, the pm-Si:H PIN solar cells experience significant topological changes, which we could not detect in a-Si:H PIN solar cells. These effects were further characterized by complementary ex-situ techniques such as SEM, AFM and spectroscopic ellipsometry.

KW - Characterization of defects in PV

KW - Hydrogen

KW - Light-induced degradation

KW - Silicon nanocrystals

U2 - 10.1016/j.solener.2016.12.030

DO - 10.1016/j.solener.2016.12.030

M3 - Article

AN - SCOPUS:85008223835

SN - 0038-092X

VL - 143

SP - 86

EP - 92

JO - Solar Energy

JF - Solar Energy

ER -

Current-induced and light-induced macroscopic changes in thin film solar cells: Device degradation mechanism

Abstract

Keywords

UN SDGs

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