Cw laser processing of semiconductor surfaces

J. M. Moison; C. Licoppe; Y. I. Nissim; F. Houzay

doi:10.1063/1.336347

Cw laser processing of semiconductor surfaces

J. M. Moison, C. Licoppe, Y. I. Nissim, F. Houzay

Orange Labs

Research output: Contribution to journal › Article › peer-review

Abstract

The usefulness of cw laser irradiation for semiconductor surface processing is evaluated. While perfect surface cleaning has not yet been obtained, surface annealing of silicon by this technique equals and even beats classical techniques or pulsed-laser irradiation. cw laser "writing" of fine surface patterns is also demonstrated.

Original language	English
Pages (from-to)	2444-2446
Number of pages	3
Journal	Journal of Applied Physics
Volume	59
Issue number	7
DOIs	https://doi.org/10.1063/1.336347
Publication status	Published - 1 Dec 1986
Externally published	Yes

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title = "Cw laser processing of semiconductor surfaces",

abstract = "The usefulness of cw laser irradiation for semiconductor surface processing is evaluated. While perfect surface cleaning has not yet been obtained, surface annealing of silicon by this technique equals and even beats classical techniques or pulsed-laser irradiation. cw laser {"}writing{"} of fine surface patterns is also demonstrated.",

author = "Moison, \{J. M.\} and C. Licoppe and Nissim, \{Y. I.\} and F. Houzay",

year = "1986",

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doi = "10.1063/1.336347",

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journal = "Journal of Applied Physics",

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AU - Moison, J. M.

AU - Licoppe, C.

AU - Nissim, Y. I.

AU - Houzay, F.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - The usefulness of cw laser irradiation for semiconductor surface processing is evaluated. While perfect surface cleaning has not yet been obtained, surface annealing of silicon by this technique equals and even beats classical techniques or pulsed-laser irradiation. cw laser "writing" of fine surface patterns is also demonstrated.

AB - The usefulness of cw laser irradiation for semiconductor surface processing is evaluated. While perfect surface cleaning has not yet been obtained, surface annealing of silicon by this technique equals and even beats classical techniques or pulsed-laser irradiation. cw laser "writing" of fine surface patterns is also demonstrated.

U2 - 10.1063/1.336347

DO - 10.1063/1.336347

M3 - Article

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SN - 0021-8979

VL - 59

SP - 2444

EP - 2446

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Cw laser processing of semiconductor surfaces

Abstract

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