Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms

P. Chabert

doi:10.1116/1.1387459

Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms

P. Chabert

Research output: Contribution to journal › Conference article › peer-review

Abstract

The highest etch rate reported to date (1.35 μ/min) was achieved in a SF₆/O₂ helicon plasma. This was attributed to the fact that helicon wave ionization is very efficient and that the distance between the substrate holder and the source antenna was minimized.

Original language	English
Pages (from-to)	1339-1345
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1387459
Publication status	Published - 1 Jul 2001
Event	19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: 15 Oct 2000 → 18 Oct 2000

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title = "Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms",

abstract = "The highest etch rate reported to date (1.35 μ/min) was achieved in a SF6/O2 helicon plasma. This was attributed to the fact that helicon wave ionization is very efficient and that the distance between the substrate holder and the source antenna was minimized.",

author = "P. Chabert",

year = "2001",

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doi = "10.1116/1.1387459",

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T2 - 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19)

AU - Chabert, P.

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Y1 - 2001/7/1

N2 - The highest etch rate reported to date (1.35 μ/min) was achieved in a SF6/O2 helicon plasma. This was attributed to the fact that helicon wave ionization is very efficient and that the distance between the substrate holder and the source antenna was minimized.

AB - The highest etch rate reported to date (1.35 μ/min) was achieved in a SF6/O2 helicon plasma. This was attributed to the fact that helicon wave ionization is very efficient and that the distance between the substrate holder and the source antenna was minimized.

UR - https://www.scopus.com/pages/publications/0035535265

U2 - 10.1116/1.1387459

DO - 10.1116/1.1387459

M3 - Conference article

AN - SCOPUS:0035535265

SN - 1071-1023

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EP - 1345

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

Y2 - 15 October 2000 through 18 October 2000

ER -

Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms

Abstract

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