Defects characterization in thin films photovoltaics materials by correlated high-frequency modulated and time resolved photoluminescence: An application to Cu(In,Ga)Se2

Baptiste Bérenguier; Nicolas Barreau; Alexandre Jaffre; Daniel Ory; Jean François Guillemoles; Jean Paul Kleider; Laurent Lombez

doi:10.1016/j.tsf.2018.11.030

Defects characterization in thin films photovoltaics materials by correlated high-frequency modulated and time resolved photoluminescence: An application to Cu(In,Ga)Se₂

Baptiste Bérenguier
, Nicolas Barreau
, Alexandre Jaffre
, Daniel Ory
, Jean François Guillemoles
, Jean Paul Kleider
, Laurent Lombez

Research output: Contribution to journal › Article › peer-review

Abstract

We develop a contactless method based on photoluminescence measurements in the modulated mode: the high-frequency modulated photoluminescence. The high frequency domain allows accessing to carrier dynamics in the nanosecond time scale which is typical for thin films materials. To illustrate the experimental method, we analyze Cu(In,Ga)Se₂ photovoltaic absorbers where recombination mechanisms in the bulk, surface and grain boundaries are not completely understood. We correlate the data with classical time resolved photoluminescence. We show that the combination of the two methods allows, with the help of one dimensional simulations, an estimation of carrier traps and recombination centers parameters in thin films samples.

Original language	English
Pages (from-to)	520-524
Number of pages	5
Journal	Thin Solid Films
Volume	669
DOIs	https://doi.org/10.1016/j.tsf.2018.11.030
Publication status	Published - 1 Jan 2019

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Carrier traps
Copper indium gallium selenide
Modulated photoluminescence
Time resolved photoluminescence
Transient photoluminescence

Access to Document

10.1016/j.tsf.2018.11.030

Cite this

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title = "Defects characterization in thin films photovoltaics materials by correlated high-frequency modulated and time resolved photoluminescence: An application to Cu(In,Ga)Se2",

abstract = "We develop a contactless method based on photoluminescence measurements in the modulated mode: the high-frequency modulated photoluminescence. The high frequency domain allows accessing to carrier dynamics in the nanosecond time scale which is typical for thin films materials. To illustrate the experimental method, we analyze Cu(In,Ga)Se2 photovoltaic absorbers where recombination mechanisms in the bulk, surface and grain boundaries are not completely understood. We correlate the data with classical time resolved photoluminescence. We show that the combination of the two methods allows, with the help of one dimensional simulations, an estimation of carrier traps and recombination centers parameters in thin films samples.",

keywords = "Carrier traps, Copper indium gallium selenide, Modulated photoluminescence, Time resolved photoluminescence, Transient photoluminescence",

author = "Baptiste B{\'e}renguier and Nicolas Barreau and Alexandre Jaffre and Daniel Ory and Guillemoles, \{Jean Fran{\c c}ois\} and Kleider, \{Jean Paul\} and Laurent Lombez",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2019",

month = jan,

day = "1",

doi = "10.1016/j.tsf.2018.11.030",

language = "English",

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T1 - Defects characterization in thin films photovoltaics materials by correlated high-frequency modulated and time resolved photoluminescence

T2 - An application to Cu(In,Ga)Se2

AU - Bérenguier, Baptiste

AU - Barreau, Nicolas

AU - Jaffre, Alexandre

AU - Ory, Daniel

AU - Guillemoles, Jean François

AU - Kleider, Jean Paul

AU - Lombez, Laurent

PY - 2019/1/1

Y1 - 2019/1/1

N2 - We develop a contactless method based on photoluminescence measurements in the modulated mode: the high-frequency modulated photoluminescence. The high frequency domain allows accessing to carrier dynamics in the nanosecond time scale which is typical for thin films materials. To illustrate the experimental method, we analyze Cu(In,Ga)Se2 photovoltaic absorbers where recombination mechanisms in the bulk, surface and grain boundaries are not completely understood. We correlate the data with classical time resolved photoluminescence. We show that the combination of the two methods allows, with the help of one dimensional simulations, an estimation of carrier traps and recombination centers parameters in thin films samples.

AB - We develop a contactless method based on photoluminescence measurements in the modulated mode: the high-frequency modulated photoluminescence. The high frequency domain allows accessing to carrier dynamics in the nanosecond time scale which is typical for thin films materials. To illustrate the experimental method, we analyze Cu(In,Ga)Se2 photovoltaic absorbers where recombination mechanisms in the bulk, surface and grain boundaries are not completely understood. We correlate the data with classical time resolved photoluminescence. We show that the combination of the two methods allows, with the help of one dimensional simulations, an estimation of carrier traps and recombination centers parameters in thin films samples.

KW - Carrier traps

KW - Copper indium gallium selenide

KW - Modulated photoluminescence

KW - Time resolved photoluminescence

KW - Transient photoluminescence

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DO - 10.1016/j.tsf.2018.11.030

M3 - Article

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