TY - JOUR
T1 - Defects introduced in the electron irradiation of GaAs
T2 - Identification with the positron lifetime spectroscopy
AU - Saarinen, K.
AU - Hautojärvi, P.
AU - Corbel, C.
PY - 1997/4/1
Y1 - 1997/4/1
N2 - We will show that positron lifetime spectroscopy provides information on the atomic structure of vacancy and ion-type defects in semiconductors. We will further demonstrate that positrons can be used to study electrical and optical properties of defects as well as their thermal stability in the heat treatments of the material. Especially, we will review information that positron experiments have provided on the point defects formed in 1-2 MeV electron irradiation of GaAs.
AB - We will show that positron lifetime spectroscopy provides information on the atomic structure of vacancy and ion-type defects in semiconductors. We will further demonstrate that positrons can be used to study electrical and optical properties of defects as well as their thermal stability in the heat treatments of the material. Especially, we will review information that positron experiments have provided on the point defects formed in 1-2 MeV electron irradiation of GaAs.
U2 - 10.1016/S0168-9002(96)01254-5
DO - 10.1016/S0168-9002(96)01254-5
M3 - Article
AN - SCOPUS:0041627573
SN - 0168-9002
VL - 388
SP - 434
EP - 439
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 3
ER -