Abstract
We propose a general methodology to define the optimum doping ion volume distribution required for an efficient solid-state laser amplifier. This approach is illustrated in the context of two experimental diode pumped Yb:YAG amplifiers operating at 300 and 160 K. Processing of such tailored gain media is now possible through horizontal direct crystallization.
| Original language | English |
|---|---|
| Article number | e35 |
| Journal | High Power Laser Science and Engineering |
| Volume | 2 |
| DOIs | |
| Publication status | Published - 1 Feb 2014 |
| Externally published | Yes |
Keywords
- diode solid-state laser
- laser gain medium doping engineering
- laser materials
- ytterbium YAG laser