Abstract
The achievement of a 1.51m InAs/InP(311)B quantum dot (QD) single-mode Fabry-Perot laser operating under continuous wave at room temperature is reported. A threshold current of 80mA associated with a 0.12W/A external efficiency is reported for as-cleaved device at room temperature. The maximum output power, the gain peak wavelength at threshold and the full width at half maximum of the spectral gain are 5mW, 1512nm and 60nm, respectively. Although these performances must be improved in the future, these results constitute to our knowledge the state-of-the-art on InP(3 1 1)B substrate. These results are of great interest since QD-based lasers are expected to play a major role in the next generation telecommunication networks as low-cost devices.
| Original language | English |
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| Pages (from-to) | 255-258 |
| Number of pages | 4 |
| Journal | IET Optoelectronics |
| Volume | 1 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 24 Dec 2007 |