Demonstration of a low threshold current in 1.54 μm InAs/InP(311)B quantum dot laser with reduced quantum dot stacks

Estelle Homeyer; Rozenn Piron; Frédéric Grillot; Olivier Dehaese; Karine Tavernier; Erwan Macé; Jacky Even; Alain Le Corre; Slimane Loualiche

doi:10.1143/JJAP.46.6903

Demonstration of a low threshold current in 1.54 μm InAs/InP(311)B quantum dot laser with reduced quantum dot stacks

Estelle Homeyer
, Rozenn Piron
, Frédéric Grillot
, Olivier Dehaese
, Karine Tavernier
, Erwan Macé
, Jacky Even
, Alain Le Corre
, Slimane Loualiche

Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

Abstract

This article reports the improvement of broad area lasers epitaxially grown on InP(311)B substrate. Thanks to optimized growth techniques, a high density of uniformly sized InAs quantum dots (QDs) up to 10¹¹ cm^-2 is obtained. The device, which contains only two stacks of QDs, exhibits a ground state laser emission at 1.54 μm at room temperature associated with a threshold current density as low as 1.70 A/cm². Experimental results also demonstrate a modal gain greater than 8 cm^-1 per QD plane.

Original language	English
Pages (from-to)	6903-6905
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	46
Issue number	10 A
DOIs	https://doi.org/10.1143/JJAP.46.6903
Publication status	Published - 9 Oct 2007

Keywords

InP substrate
Quantum dots
Semiconductor laser

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10.1143/JJAP.46.6903

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title = "Demonstration of a low threshold current in 1.54 μm InAs/InP(311)B quantum dot laser with reduced quantum dot stacks",

abstract = "This article reports the improvement of broad area lasers epitaxially grown on InP(311)B substrate. Thanks to optimized growth techniques, a high density of uniformly sized InAs quantum dots (QDs) up to 1011 cm-2 is obtained. The device, which contains only two stacks of QDs, exhibits a ground state laser emission at 1.54 μm at room temperature associated with a threshold current density as low as 1.70 A/cm2. Experimental results also demonstrate a modal gain greater than 8 cm-1 per QD plane.",

keywords = "InP substrate, Quantum dots, Semiconductor laser",

author = "Estelle Homeyer and Rozenn Piron and Fr{\'e}d{\'e}ric Grillot and Olivier Dehaese and Karine Tavernier and Erwan Mac{\'e} and Jacky Even and \{Le Corre\}, Alain and Slimane Loualiche",

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doi = "10.1143/JJAP.46.6903",

language = "English",

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T1 - Demonstration of a low threshold current in 1.54 μm InAs/InP(311)B quantum dot laser with reduced quantum dot stacks

AU - Homeyer, Estelle

AU - Piron, Rozenn

AU - Grillot, Frédéric

AU - Dehaese, Olivier

AU - Tavernier, Karine

AU - Macé, Erwan

AU - Even, Jacky

AU - Le Corre, Alain

AU - Loualiche, Slimane

PY - 2007/10/9

Y1 - 2007/10/9

N2 - This article reports the improvement of broad area lasers epitaxially grown on InP(311)B substrate. Thanks to optimized growth techniques, a high density of uniformly sized InAs quantum dots (QDs) up to 1011 cm-2 is obtained. The device, which contains only two stacks of QDs, exhibits a ground state laser emission at 1.54 μm at room temperature associated with a threshold current density as low as 1.70 A/cm2. Experimental results also demonstrate a modal gain greater than 8 cm-1 per QD plane.

AB - This article reports the improvement of broad area lasers epitaxially grown on InP(311)B substrate. Thanks to optimized growth techniques, a high density of uniformly sized InAs quantum dots (QDs) up to 1011 cm-2 is obtained. The device, which contains only two stacks of QDs, exhibits a ground state laser emission at 1.54 μm at room temperature associated with a threshold current density as low as 1.70 A/cm2. Experimental results also demonstrate a modal gain greater than 8 cm-1 per QD plane.

KW - InP substrate

KW - Quantum dots

KW - Semiconductor laser

U2 - 10.1143/JJAP.46.6903

DO - 10.1143/JJAP.46.6903

M3 - Article

AN - SCOPUS:35348899402

SN - 0021-4922

VL - 46

SP - 6903

EP - 6905

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10 A

ER -

Demonstration of a low threshold current in 1.54 μm InAs/InP(311)B quantum dot laser with reduced quantum dot stacks

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Keywords

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