Deposition of carbon nitride thin films by IR-laser-induced reactions in carbon-nitrogen gas-phase compounds

Aurelian Crunteanu; Rodica Alexandrescu; Raluca Cireasa; S. Cojocaru; Ion G. Morjan; A. Andrei; Ashock Kumar

doi:10.1117/12.312751

Deposition of carbon nitride thin films by IR-laser-induced reactions in carbon-nitrogen gas-phase compounds

Aurelian Crunteanu
, Rodica Alexandrescu
, Raluca Cireasa
, S. Cojocaru
, Ion G. Morjan
, A. Andrei
, Ashock Kumar

Research output: Contribution to journal › Conference article › peer-review

Abstract

Since the theoretical studies of Liu and Cohen who predicted the existence of a superhard phase of carbon nitride, a great deal of effort was underdone in order to synthesize this hypothetical material with a nitrogen content as high as the 57% present in a β-C₃N₄ structure. This study presents an attempt to produce CN_x thin films using the laser-induced CVD technique. CW CO₂ laser was used for irradiating various carbon-nitrogen containing mixtures such as C₂H₄/N ₂O/NH₃. The CN_x films were grown alternatively on bare alumina (α-Al₂O₃) substrates and on pre-deposited Ti films. A comparative analysis of nitrogen incorporation in the films obtained in different experimental conditions was performed by means of the X-ray photoelectron spectroscopy (XPS). The same method was used to identify the chemical states of the CN system.

Original language	English
Pages (from-to)	199-204
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3405
DOIs	https://doi.org/10.1117/12.312751
Publication status	Published - 1 Jan 1998
Externally published	Yes
Event	ROMOPTO '97: 5th Conference on Optics - Bucharest, Romania Duration: 9 Sept 1997 → 9 Sept 1997

Keywords

Carbon nitride
Laser pyrolysis
Thin films
XPS analysis

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10.1117/12.312751

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title = "Deposition of carbon nitride thin films by IR-laser-induced reactions in carbon-nitrogen gas-phase compounds",

abstract = "Since the theoretical studies of Liu and Cohen who predicted the existence of a superhard phase of carbon nitride, a great deal of effort was underdone in order to synthesize this hypothetical material with a nitrogen content as high as the 57\% present in a β-C3N4 structure. This study presents an attempt to produce CNx thin films using the laser-induced CVD technique. CW CO2 laser was used for irradiating various carbon-nitrogen containing mixtures such as C2H4/N 2O/NH3. The CNx films were grown alternatively on bare alumina (α-Al2O3) substrates and on pre-deposited Ti films. A comparative analysis of nitrogen incorporation in the films obtained in different experimental conditions was performed by means of the X-ray photoelectron spectroscopy (XPS). The same method was used to identify the chemical states of the CN system.",

keywords = "Carbon nitride, Laser pyrolysis, Thin films, XPS analysis",

author = "Aurelian Crunteanu and Rodica Alexandrescu and Raluca Cireasa and S. Cojocaru and Morjan, \{Ion G.\} and A. Andrei and Ashock Kumar",

year = "1998",

month = jan,

day = "1",

doi = "10.1117/12.312751",

language = "English",

volume = "3405",

pages = "199--204",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

note = "ROMOPTO '97: 5th Conference on Optics ; Conference date: 09-09-1997 Through 09-09-1997",

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TY - JOUR

T1 - Deposition of carbon nitride thin films by IR-laser-induced reactions in carbon-nitrogen gas-phase compounds

AU - Crunteanu, Aurelian

AU - Alexandrescu, Rodica

AU - Cireasa, Raluca

AU - Cojocaru, S.

AU - Morjan, Ion G.

AU - Andrei, A.

AU - Kumar, Ashock

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Since the theoretical studies of Liu and Cohen who predicted the existence of a superhard phase of carbon nitride, a great deal of effort was underdone in order to synthesize this hypothetical material with a nitrogen content as high as the 57% present in a β-C3N4 structure. This study presents an attempt to produce CNx thin films using the laser-induced CVD technique. CW CO2 laser was used for irradiating various carbon-nitrogen containing mixtures such as C2H4/N 2O/NH3. The CNx films were grown alternatively on bare alumina (α-Al2O3) substrates and on pre-deposited Ti films. A comparative analysis of nitrogen incorporation in the films obtained in different experimental conditions was performed by means of the X-ray photoelectron spectroscopy (XPS). The same method was used to identify the chemical states of the CN system.

AB - Since the theoretical studies of Liu and Cohen who predicted the existence of a superhard phase of carbon nitride, a great deal of effort was underdone in order to synthesize this hypothetical material with a nitrogen content as high as the 57% present in a β-C3N4 structure. This study presents an attempt to produce CNx thin films using the laser-induced CVD technique. CW CO2 laser was used for irradiating various carbon-nitrogen containing mixtures such as C2H4/N 2O/NH3. The CNx films were grown alternatively on bare alumina (α-Al2O3) substrates and on pre-deposited Ti films. A comparative analysis of nitrogen incorporation in the films obtained in different experimental conditions was performed by means of the X-ray photoelectron spectroscopy (XPS). The same method was used to identify the chemical states of the CN system.

KW - Carbon nitride

KW - Laser pyrolysis

KW - Thin films

KW - XPS analysis

UR - https://www.scopus.com/pages/publications/58149214079

U2 - 10.1117/12.312751

DO - 10.1117/12.312751

M3 - Conference article

AN - SCOPUS:58149214079

SN - 0277-786X

VL - 3405

SP - 199

EP - 204

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - ROMOPTO '97: 5th Conference on Optics

Y2 - 9 September 1997 through 9 September 1997

ER -

Deposition of carbon nitride thin films by IR-laser-induced reactions in carbon-nitrogen gas-phase compounds

Abstract

Keywords

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