Depth analysis of boron diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy

Y. Lu; B. Lépine; G. Jézéquel; S. Ababou; M. Alnot; J. Lambert; A. Renard; M. Mullet; C. Deranlot; H. Jaffrès; F. Petroff; J. M. George

doi:10.1063/1.3465308

Depth analysis of boron diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy

Y. Lu
, B. Lépine
, G. Jézéquel
, S. Ababou
, M. Alnot
, J. Lambert
, A. Renard
, M. Mullet
, C. Deranlot
, H. Jaffrès
, F. Petroff
, J. M. George

École Polytechnique

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied the boron (B) diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy depth analysis. A large concentration of B (B/Mg=0.16) was found to diffuse into the MgO barrier after 350 °C annealing. The boron in MgO is in a highly oxidized B³⁺ state and is homogenously distributed in the whole barrier. The important B diffusion in MgO could be related to the CoFeB crystallization process which begins from the under CoFeB/Ru interface and pushes boron atoms to diffuse into the MgO barrier during annealing.

Original language	English
Article number	043703
Journal	Journal of Applied Physics
Volume	108
Issue number	4
DOIs	https://doi.org/10.1063/1.3465308
Publication status	Published - 15 Aug 2010

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@article{477fedfd5d474177806515fdd786372a,

title = "Depth analysis of boron diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy",

abstract = "We have studied the boron (B) diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy depth analysis. A large concentration of B (B/Mg=0.16) was found to diffuse into the MgO barrier after 350 °C annealing. The boron in MgO is in a highly oxidized B3+ state and is homogenously distributed in the whole barrier. The important B diffusion in MgO could be related to the CoFeB crystallization process which begins from the under CoFeB/Ru interface and pushes boron atoms to diffuse into the MgO barrier during annealing.",

author = "Y. Lu and B. L{\'e}pine and G. J{\'e}z{\'e}quel and S. Ababou and M. Alnot and J. Lambert and A. Renard and M. Mullet and C. Deranlot and H. Jaffr{\`e}s and F. Petroff and George, \{J. M.\}",

year = "2010",

month = aug,

day = "15",

doi = "10.1063/1.3465308",

language = "English",

volume = "108",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Depth analysis of boron diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy

AU - Lu, Y.

AU - Lépine, B.

AU - Jézéquel, G.

AU - Ababou, S.

AU - Alnot, M.

AU - Lambert, J.

AU - Renard, A.

AU - Mullet, M.

AU - Deranlot, C.

AU - Jaffrès, H.

AU - Petroff, F.

AU - George, J. M.

PY - 2010/8/15

Y1 - 2010/8/15

N2 - We have studied the boron (B) diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy depth analysis. A large concentration of B (B/Mg=0.16) was found to diffuse into the MgO barrier after 350 °C annealing. The boron in MgO is in a highly oxidized B3+ state and is homogenously distributed in the whole barrier. The important B diffusion in MgO could be related to the CoFeB crystallization process which begins from the under CoFeB/Ru interface and pushes boron atoms to diffuse into the MgO barrier during annealing.

AB - We have studied the boron (B) diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy depth analysis. A large concentration of B (B/Mg=0.16) was found to diffuse into the MgO barrier after 350 °C annealing. The boron in MgO is in a highly oxidized B3+ state and is homogenously distributed in the whole barrier. The important B diffusion in MgO could be related to the CoFeB crystallization process which begins from the under CoFeB/Ru interface and pushes boron atoms to diffuse into the MgO barrier during annealing.

U2 - 10.1063/1.3465308

DO - 10.1063/1.3465308

M3 - Article

AN - SCOPUS:77956336978

SN - 0021-8979

VL - 108

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 043703

ER -

Depth analysis of boron diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy

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