Abstract
We present the integration of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack including a hydrogenated amorphous silicon P-i-N junction surrounded by TCO layers, with a back metallic contact. Optical simulations exhibit a significant increase of the integrated absorption in the 300-720nm wavelength range. The global electro-optical characteristics of such a new solar cell, and the impact of surface passivation, are also discussed. Carrier generation rate maps calculated by optical simulations are introduced as input data in a commercial electrical simulation software. The fabrication of such a device is finally addressed, with a specific focus on the use of low cost nanopatterning processes compatible with large areas.
| Original language | English |
|---|---|
| Title of host publication | Photonics for Solar Energy Systems III |
| Publisher | SPIE |
| ISBN (Print) | 9780819481986 |
| DOIs | |
| Publication status | Published - 1 Jan 2010 |
| Event | Photonics for Solar Energy Systems III - Brussels, Belgium Duration: 13 Apr 2010 → 15 Apr 2010 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 7725 |
| ISSN (Print) | 0277-786X |
Conference
| Conference | Photonics for Solar Energy Systems III |
|---|---|
| Country/Territory | Belgium |
| City | Brussels |
| Period | 13/04/10 → 15/04/10 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Hydrogenated amorphous silicon
- Photonic crystal
- Photovoltaic solar cell
- Thin film solar cell
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