Design insights for reliable energy efficient OxRAM-based flip-flop in 28nm FD-SOI

Natalija Jovanovic; Elisa Vianello; Olivier Thomas; Borivoje Nikolic; Lirida Naviner

doi:10.1109/S3S.2015.7333551

Design insights for reliable energy efficient OxRAM-based flip-flop in 28nm FD-SOI

Natalija Jovanovic
, Elisa Vianello
, Olivier Thomas
, Borivoje Nikolic
, Lirida Naviner

LETI (CEA-Technologies Avancees)
University of California, Berkeley

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

This paper investigates the design architecture and the optimum resistance state values for high-endurance, high-yield energy-efficient OxRAM-based non-volatile flip-flops (NVFF) for ultra-low power applications in 28nm FD-SOI. Silicon measurements demonstrate that a low programming current improves endurance, but at the expense of a reduced memory window (R_OFF/R_ON). Statistical analyses show that the scaling limitation of the NVFF operating voltage in restore mode can be overcome with a narrow memory window by using a current-based design solution. Low variability of the FD-SOI enables to operate down-to 0.7V with more than 10⁸ of endurance cycles.

Original language	English
Title of host publication	2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509002597
DOIs	https://doi.org/10.1109/S3S.2015.7333551
Publication status	Published - 20 Nov 2015
Event	IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015 - Rohnert Park, United States Duration: 5 Oct 2015 → 8 Oct 2015

Publication series

Name	2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015

Conference

Conference	IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015
Country/Territory	United States
City	Rohnert Park
Period	5/10/15 → 8/10/15

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10.1109/S3S.2015.7333551

Cite this

Jovanovic, N., Vianello, E., Thomas, O., Nikolic, B., & Naviner, L. (2015). Design insights for reliable energy efficient OxRAM-based flip-flop in 28nm FD-SOI. In 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015 Article 7333551 (2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/S3S.2015.7333551

Jovanovic, Natalija ; Vianello, Elisa ; Thomas, Olivier et al. / Design insights for reliable energy efficient OxRAM-based flip-flop in 28nm FD-SOI. 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015).

@inproceedings{458cd979bc8542739cf4883eba3c256b,

title = "Design insights for reliable energy efficient OxRAM-based flip-flop in 28nm FD-SOI",

abstract = "This paper investigates the design architecture and the optimum resistance state values for high-endurance, high-yield energy-efficient OxRAM-based non-volatile flip-flops (NVFF) for ultra-low power applications in 28nm FD-SOI. Silicon measurements demonstrate that a low programming current improves endurance, but at the expense of a reduced memory window (ROFF/RON). Statistical analyses show that the scaling limitation of the NVFF operating voltage in restore mode can be overcome with a narrow memory window by using a current-based design solution. Low variability of the FD-SOI enables to operate down-to 0.7V with more than 108 of endurance cycles.",

author = "Natalija Jovanovic and Elisa Vianello and Olivier Thomas and Borivoje Nikolic and Lirida Naviner",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015 ; Conference date: 05-10-2015 Through 08-10-2015",

year = "2015",

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doi = "10.1109/S3S.2015.7333551",

language = "English",

series = "2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Jovanovic, N, Vianello, E, Thomas, O, Nikolic, B & Naviner, L 2015, Design insights for reliable energy efficient OxRAM-based flip-flop in 28nm FD-SOI. in 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015., 7333551, 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015, Institute of Electrical and Electronics Engineers Inc., IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015, Rohnert Park, United States, 5/10/15. https://doi.org/10.1109/S3S.2015.7333551

Design insights for reliable energy efficient OxRAM-based flip-flop in 28nm FD-SOI. / Jovanovic, Natalija; Vianello, Elisa; Thomas, Olivier et al.
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7333551 (2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Design insights for reliable energy efficient OxRAM-based flip-flop in 28nm FD-SOI

AU - Jovanovic, Natalija

AU - Vianello, Elisa

AU - Thomas, Olivier

AU - Nikolic, Borivoje

AU - Naviner, Lirida

PY - 2015/11/20

Y1 - 2015/11/20

N2 - This paper investigates the design architecture and the optimum resistance state values for high-endurance, high-yield energy-efficient OxRAM-based non-volatile flip-flops (NVFF) for ultra-low power applications in 28nm FD-SOI. Silicon measurements demonstrate that a low programming current improves endurance, but at the expense of a reduced memory window (ROFF/RON). Statistical analyses show that the scaling limitation of the NVFF operating voltage in restore mode can be overcome with a narrow memory window by using a current-based design solution. Low variability of the FD-SOI enables to operate down-to 0.7V with more than 108 of endurance cycles.

AB - This paper investigates the design architecture and the optimum resistance state values for high-endurance, high-yield energy-efficient OxRAM-based non-volatile flip-flops (NVFF) for ultra-low power applications in 28nm FD-SOI. Silicon measurements demonstrate that a low programming current improves endurance, but at the expense of a reduced memory window (ROFF/RON). Statistical analyses show that the scaling limitation of the NVFF operating voltage in restore mode can be overcome with a narrow memory window by using a current-based design solution. Low variability of the FD-SOI enables to operate down-to 0.7V with more than 108 of endurance cycles.

U2 - 10.1109/S3S.2015.7333551

DO - 10.1109/S3S.2015.7333551

M3 - Conference contribution

AN - SCOPUS:84961775147

T3 - 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015

BT - 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015

Y2 - 5 October 2015 through 8 October 2015

ER -

Jovanovic N, Vianello E, Thomas O, Nikolic B, Naviner L. Design insights for reliable energy efficient OxRAM-based flip-flop in 28nm FD-SOI. In 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7333551. (2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015). doi: 10.1109/S3S.2015.7333551

Design insights for reliable energy efficient OxRAM-based flip-flop in 28nm FD-SOI

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