TY - GEN
T1 - Design of TAS-MRAM prototype for NV embedded memory applications
AU - Chaudhuri, Sumanta
AU - Zhao, Weisheng
AU - Klein, Jacques Olivier
AU - Chappert, Claude
AU - Mazoyer, Pascale
PY - 2010/10/20
Y1 - 2010/10/20
N2 - In this paper, we present a new design of TAS-MRAM, which is dedicated for the embedded applications. The Thermally Assisted Switching (TAS) approach allows the low power memory programming and Pre-Charge Sense Amplifiers (PCSA) enable the reliable, high speed and low power sensing. By using a TAS-MTJ spice model integrating the precise experimental parameters and CMOS 130nm technology, simulations have been done to demonstrate the expected performances; a 128Kb prototype has been developed to validate experimentally the new design by means of standard cell and automatic macro generation techniques.
AB - In this paper, we present a new design of TAS-MRAM, which is dedicated for the embedded applications. The Thermally Assisted Switching (TAS) approach allows the low power memory programming and Pre-Charge Sense Amplifiers (PCSA) enable the reliable, high speed and low power sensing. By using a TAS-MTJ spice model integrating the precise experimental parameters and CMOS 130nm technology, simulations have been done to demonstrate the expected performances; a 128Kb prototype has been developed to validate experimentally the new design by means of standard cell and automatic macro generation techniques.
U2 - 10.1109/IMW.2010.5488401
DO - 10.1109/IMW.2010.5488401
M3 - Conference contribution
AN - SCOPUS:77957916645
SN - 9781424467211
T3 - 2010 IEEE International Memory Workshop, IMW 2010
BT - 2010 IEEE International Memory Workshop, IMW 2010
T2 - 2010 IEEE International Memory Workshop, IMW 2010
Y2 - 16 May 2010 through 19 May 2010
ER -