Detection of Ga vacancies in electron irradiated GaAs by positrons

P. Hautojärvi; P. Moser; M. Stucky; C. Corbel; F. Plazaola

doi:10.1063/1.96677

Detection of Ga vacancies in electron irradiated GaAs by positrons

P. Hautojärvi
, P. Moser
, M. Stucky
, C. Corbel
, F. Plazaola

Research output: Contribution to journal › Article › peer-review

Abstract

Positron lifetime measurements have been used to study the recovery of electron irradiated GaAs between 77 and 800 K. Below room temperature positrons are trapped by vacancies in Ga sublattices. The Ga vacancies recover between 200 and 350 K.

Original language	English
Pages (from-to)	809-810
Number of pages	2
Journal	Applied Physics Letters
Volume	48
Issue number	12
DOIs	https://doi.org/10.1063/1.96677
Publication status	Published - 1 Dec 1986
Externally published	Yes

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title = "Detection of Ga vacancies in electron irradiated GaAs by positrons",

abstract = "Positron lifetime measurements have been used to study the recovery of electron irradiated GaAs between 77 and 800 K. Below room temperature positrons are trapped by vacancies in Ga sublattices. The Ga vacancies recover between 200 and 350 K.",

author = "P. Hautoj{\"a}rvi and P. Moser and M. Stucky and C. Corbel and F. Plazaola",

year = "1986",

month = dec,

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doi = "10.1063/1.96677",

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journal = "Applied Physics Letters",

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T1 - Detection of Ga vacancies in electron irradiated GaAs by positrons

AU - Hautojärvi, P.

AU - Moser, P.

AU - Stucky, M.

AU - Corbel, C.

AU - Plazaola, F.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - Positron lifetime measurements have been used to study the recovery of electron irradiated GaAs between 77 and 800 K. Below room temperature positrons are trapped by vacancies in Ga sublattices. The Ga vacancies recover between 200 and 350 K.

AB - Positron lifetime measurements have been used to study the recovery of electron irradiated GaAs between 77 and 800 K. Below room temperature positrons are trapped by vacancies in Ga sublattices. The Ga vacancies recover between 200 and 350 K.

U2 - 10.1063/1.96677

DO - 10.1063/1.96677

M3 - Article

AN - SCOPUS:0009088161

SN - 0003-6951

VL - 48

SP - 809

EP - 810

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Detection of Ga vacancies in electron irradiated GaAs by positrons

Abstract

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