Detection of stable positive fixed charges in AlOx activated during annealing with in situ modulated PhotoLuminescence

  • Anatole Desthieux
  • , Mengkoing Sreng
  • , Pavel Bulkin
  • , Ileana Florea
  • , Etienne Drahi
  • , Barbara Bazer-Bachi
  • , Jean Charles Vanel
  • , François Silva
  • , Jorge Posada
  • , Pere Roca i Cabarrocas

Research output: Contribution to journalArticlepeer-review

Abstract

An in situ Modulated Photoluminescence (MPL) measurement setup mounted on a Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor is described. A method for deriving the actual minority carrier lifetime at the specific injection level of 1.1015 cm−3 is presented. This tool was used in a case study to monitor the passivation properties of aluminum oxide (AlOx) thin films upon annealing. Interesting kinetics, such as a drop of lifetime at temperatures higher than 250 °C along with a recovery of the lifetime during the cooling phase, are shown. Moreover, these in situ results combined with ex situ studies allowed us to demonstrate the formation a stable high positive fixed charge density in the AlOx layer (+1.1012 cm−2) as a consequence of the combination of annealing and light exposure.

Original languageEnglish
Article number111172
JournalSolar Energy Materials and Solar Cells
Volume230
DOIs
Publication statusPublished - 15 Sept 2021

Keywords

  • Aluminum oxide
  • Annealing
  • Fixed charges
  • In situ
  • Modulated photoluminescence
  • Silicon solar cells

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