Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements: Capabilities and limits

A. S. Gudovskikh; S. Ibrahim; J. P. Kleider; J. Damon-Lacoste; P. Roca i Cabarrocas; Y. Veschetti; P. J. Ribeyron

doi:10.1016/j.tsf.2006.11.198

Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements: Capabilities and limits

A. S. Gudovskikh
, S. Ibrahim
, J. P. Kleider
, J. Damon-Lacoste
, P. Roca i Cabarrocas
, Y. Veschetti
, P. J. Ribeyron

Research output: Contribution to journal › Article › peer-review

Abstract

The capabilities and limitations of the well-known C-V technique for the determination of the conduction band offsets in (n)a-Si:H/(p)c-Si heterojunctions are presented. In particular, the effects due to the presence of an inversion layer in c-Si and a non-negligible defect density at the a-Si:H/c-Si interface on the reliability of the C-V intercept method are discussed. The influence of the Fermi level positions in (p)c-Si and (n)a-Si:H on the inversion layer formation and the influence of the interface defect density have been analysed using numerical simulations and experimental measurements.

Original language	English
Pages (from-to)	7481-7485
Number of pages	5
Journal	Thin Solid Films
Volume	515
Issue number	19 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2006.11.198
Publication status	Published - 16 Jul 2007

Keywords

Capacitance technique
Heterostructures
Solar cells

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10.1016/j.tsf.2006.11.198

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title = "Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements: Capabilities and limits",

abstract = "The capabilities and limitations of the well-known C-V technique for the determination of the conduction band offsets in (n)a-Si:H/(p)c-Si heterojunctions are presented. In particular, the effects due to the presence of an inversion layer in c-Si and a non-negligible defect density at the a-Si:H/c-Si interface on the reliability of the C-V intercept method are discussed. The influence of the Fermi level positions in (p)c-Si and (n)a-Si:H on the inversion layer formation and the influence of the interface defect density have been analysed using numerical simulations and experimental measurements.",

keywords = "Capacitance technique, Heterostructures, Solar cells",

author = "Gudovskikh, \{A. S.\} and S. Ibrahim and Kleider, \{J. P.\} and J. Damon-Lacoste and \{Roca i Cabarrocas\}, P. and Y. Veschetti and Ribeyron, \{P. J.\}",

year = "2007",

month = jul,

day = "16",

doi = "10.1016/j.tsf.2006.11.198",

language = "English",

volume = "515",

pages = "7481--7485",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "19 SPEC. ISS.",

}

TY - JOUR

T1 - Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements

T2 - Capabilities and limits

AU - Gudovskikh, A. S.

AU - Ibrahim, S.

AU - Kleider, J. P.

AU - Damon-Lacoste, J.

AU - Roca i Cabarrocas, P.

AU - Veschetti, Y.

AU - Ribeyron, P. J.

PY - 2007/7/16

Y1 - 2007/7/16

N2 - The capabilities and limitations of the well-known C-V technique for the determination of the conduction band offsets in (n)a-Si:H/(p)c-Si heterojunctions are presented. In particular, the effects due to the presence of an inversion layer in c-Si and a non-negligible defect density at the a-Si:H/c-Si interface on the reliability of the C-V intercept method are discussed. The influence of the Fermi level positions in (p)c-Si and (n)a-Si:H on the inversion layer formation and the influence of the interface defect density have been analysed using numerical simulations and experimental measurements.

AB - The capabilities and limitations of the well-known C-V technique for the determination of the conduction band offsets in (n)a-Si:H/(p)c-Si heterojunctions are presented. In particular, the effects due to the presence of an inversion layer in c-Si and a non-negligible defect density at the a-Si:H/c-Si interface on the reliability of the C-V intercept method are discussed. The influence of the Fermi level positions in (p)c-Si and (n)a-Si:H on the inversion layer formation and the influence of the interface defect density have been analysed using numerical simulations and experimental measurements.

KW - Capacitance technique

KW - Heterostructures

KW - Solar cells

U2 - 10.1016/j.tsf.2006.11.198

DO - 10.1016/j.tsf.2006.11.198

M3 - Article

AN - SCOPUS:34547578195

SN - 0040-6090

VL - 515

SP - 7481

EP - 7485

JO - Thin Solid Films

JF - Thin Solid Films

IS - 19 SPEC. ISS.

ER -

Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements: Capabilities and limits

Abstract

Keywords

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