Determination of the composition and thickness of borophosphosilicate glass films by infrared ellipsometry

R. Ossikovski; N. Blayo; B. Drévillon; M. Firon; B. Delahaye; A. Mayeux

doi:10.1063/1.112081

Determination of the composition and thickness of borophosphosilicate glass films by infrared ellipsometry

R. Ossikovski
, N. Blayo
, B. Drévillon
, M. Firon
, B. Delahaye
, A. Mayeux

Research output: Contribution to journal › Article › peer-review

Abstract

A quantitative analysis of IR ellipsometry spectra of borophosphosilicate glass (BPSG) thin films deposited on silicon wafers is presented. The film thickness is determined with a standard deviation of 5.8 nm using a fitting procedure based on only two free parameters. A simple linear analysis of the dependence of the ellipsometric measurements upon film composition provides standard deviations of 0.04 and 0.12 wt % on boron and phosphorus content, respectively.

Original language	English
Pages (from-to)	1236-1238
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	10
DOIs	https://doi.org/10.1063/1.112081
Publication status	Published - 1 Jan 1994

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10.1063/1.112081

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title = "Determination of the composition and thickness of borophosphosilicate glass films by infrared ellipsometry",

abstract = "A quantitative analysis of IR ellipsometry spectra of borophosphosilicate glass (BPSG) thin films deposited on silicon wafers is presented. The film thickness is determined with a standard deviation of 5.8 nm using a fitting procedure based on only two free parameters. A simple linear analysis of the dependence of the ellipsometric measurements upon film composition provides standard deviations of 0.04 and 0.12 wt \% on boron and phosphorus content, respectively.",

author = "R. Ossikovski and N. Blayo and B. Dr{\'e}villon and M. Firon and B. Delahaye and A. Mayeux",

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T1 - Determination of the composition and thickness of borophosphosilicate glass films by infrared ellipsometry

AU - Ossikovski, R.

AU - Blayo, N.

AU - Drévillon, B.

AU - Firon, M.

AU - Delahaye, B.

AU - Mayeux, A.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - A quantitative analysis of IR ellipsometry spectra of borophosphosilicate glass (BPSG) thin films deposited on silicon wafers is presented. The film thickness is determined with a standard deviation of 5.8 nm using a fitting procedure based on only two free parameters. A simple linear analysis of the dependence of the ellipsometric measurements upon film composition provides standard deviations of 0.04 and 0.12 wt % on boron and phosphorus content, respectively.

AB - A quantitative analysis of IR ellipsometry spectra of borophosphosilicate glass (BPSG) thin films deposited on silicon wafers is presented. The film thickness is determined with a standard deviation of 5.8 nm using a fitting procedure based on only two free parameters. A simple linear analysis of the dependence of the ellipsometric measurements upon film composition provides standard deviations of 0.04 and 0.12 wt % on boron and phosphorus content, respectively.

UR - https://www.scopus.com/pages/publications/0028765608

U2 - 10.1063/1.112081

DO - 10.1063/1.112081

M3 - Article

AN - SCOPUS:0028765608

SN - 0003-6951

VL - 65

SP - 1236

EP - 1238

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Determination of the composition and thickness of borophosphosilicate glass films by infrared ellipsometry

Abstract

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