Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

J. P. Kleider; A. S. Gudovskikh; P. Roca I Cabarrocas

doi:10.1063/1.2907695

Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

J. P. Kleider
, A. S. Gudovskikh
, P. Roca I Cabarrocas

Research output: Contribution to journal › Article › peer-review

Abstract

The presence of an electron rich inversion layer in p -type crystalline silicon (c-Si) at the interface with n -type hydrogenated amorphous silicon (a-Si:H) is experimentally demonstrated from the coplanar conductance of (n) a-Si:H (p) c-Si structures, which is shown to be very sensitive to the band mismatch between the two semiconductors. The temperature dependence of the corresponding sheet electron density allows to determine with a very good precision the conduction band offset Δ EC between a-Si:H and c-Si:Δ EC =0.15±0.04 eV.

Original language	English
Article number	162101
Journal	Applied Physics Letters
Volume	92
Issue number	16
DOIs	https://doi.org/10.1063/1.2907695
Publication status	Published - 1 May 2008

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title = "Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements",

abstract = "The presence of an electron rich inversion layer in p -type crystalline silicon (c-Si) at the interface with n -type hydrogenated amorphous silicon (a-Si:H) is experimentally demonstrated from the coplanar conductance of (n) a-Si:H (p) c-Si structures, which is shown to be very sensitive to the band mismatch between the two semiconductors. The temperature dependence of the corresponding sheet electron density allows to determine with a very good precision the conduction band offset Δ EC between a-Si:H and c-Si:Δ EC =0.15±0.04 eV.",

author = "Kleider, \{J. P.\} and Gudovskikh, \{A. S.\} and \{Roca I Cabarrocas\}, P.",

year = "2008",

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doi = "10.1063/1.2907695",

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T1 - Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

AU - Kleider, J. P.

AU - Gudovskikh, A. S.

AU - Roca I Cabarrocas, P.

PY - 2008/5/1

Y1 - 2008/5/1

N2 - The presence of an electron rich inversion layer in p -type crystalline silicon (c-Si) at the interface with n -type hydrogenated amorphous silicon (a-Si:H) is experimentally demonstrated from the coplanar conductance of (n) a-Si:H (p) c-Si structures, which is shown to be very sensitive to the band mismatch between the two semiconductors. The temperature dependence of the corresponding sheet electron density allows to determine with a very good precision the conduction band offset Δ EC between a-Si:H and c-Si:Δ EC =0.15±0.04 eV.

AB - The presence of an electron rich inversion layer in p -type crystalline silicon (c-Si) at the interface with n -type hydrogenated amorphous silicon (a-Si:H) is experimentally demonstrated from the coplanar conductance of (n) a-Si:H (p) c-Si structures, which is shown to be very sensitive to the band mismatch between the two semiconductors. The temperature dependence of the corresponding sheet electron density allows to determine with a very good precision the conduction band offset Δ EC between a-Si:H and c-Si:Δ EC =0.15±0.04 eV.

U2 - 10.1063/1.2907695

DO - 10.1063/1.2907695

M3 - Article

AN - SCOPUS:42549164617

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162101

ER -

Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

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