Development and verification of a new non-linear MOSFET model

Haroun Romdane; Eric Bergeault; Bernard Huyart

Development and verification of a new non-linear MOSFET model

Haroun Romdane
, Eric Bergeault
, Bernard Huyart

Centre national de la recherche scientifique

Research output: Contribution to conference › Paper › peer-review

Abstract

A new non-linear model of SiMOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on wafer measurements of S parameters at a typical bias point.

Original language	English
Pages	487-489
Number of pages	3
Publication status	Published - 1 Jan 2002
Event	2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States Duration: 2 Jun 2002 → 4 Jun 2002

Conference

Conference	2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/Territory	United States
City	Seatle, WA
Period	2/06/02 → 4/06/02

Cite this

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title = "Development and verification of a new non-linear MOSFET model",

abstract = "A new non-linear model of SiMOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on wafer measurements of S parameters at a typical bias point.",

author = "Haroun Romdane and Eric Bergeault and Bernard Huyart",

year = "2002",

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language = "English",

pages = "487--489",

note = "2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium ; Conference date: 02-06-2002 Through 04-06-2002",

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T1 - Development and verification of a new non-linear MOSFET model

AU - Romdane, Haroun

AU - Bergeault, Eric

AU - Huyart, Bernard

PY - 2002/1/1

Y1 - 2002/1/1

N2 - A new non-linear model of SiMOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on wafer measurements of S parameters at a typical bias point.

AB - A new non-linear model of SiMOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on wafer measurements of S parameters at a typical bias point.

M3 - Paper

AN - SCOPUS:0036316920

SP - 487

EP - 489

T2 - 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Y2 - 2 June 2002 through 4 June 2002

ER -

Development and verification of a new non-linear MOSFET model

Abstract

Conference

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Cite this