Development and verification of a new non-linear MOSFET model

Haroun Romdane; Eric Bergeault; Bernard Huyart

Development and verification of a new non-linear MOSFET model

Haroun Romdane
, Eric Bergeault
, Bernard Huyart

Centre national de la recherche scientifique

Research output: Contribution to journal › Conference article › peer-review

Abstract

A new non-linear model of SiMOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on-wafer measurements of S parameters at a typical bias point.

Original language	English
Pages (from-to)	597-599
Number of pages	3
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1
Publication status	Published - 1 Jan 2002
Event	2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States Duration: 2 Jun 2002 → 7 Jun 2002

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title = "Development and verification of a new non-linear MOSFET model",

abstract = "A new non-linear model of SiMOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on-wafer measurements of S parameters at a typical bias point.",

author = "Haroun Romdane and Eric Bergeault and Bernard Huyart",

year = "2002",

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day = "1",

language = "English",

volume = "1",

pages = "597--599",

journal = "IEEE MTT-S International Microwave Symposium Digest",

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note = "2002 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 02-06-2002 Through 07-06-2002",

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TY - JOUR

T1 - Development and verification of a new non-linear MOSFET model

AU - Romdane, Haroun

AU - Bergeault, Eric

AU - Huyart, Bernard

PY - 2002/1/1

Y1 - 2002/1/1

N2 - A new non-linear model of SiMOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on-wafer measurements of S parameters at a typical bias point.

AB - A new non-linear model of SiMOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on-wafer measurements of S parameters at a typical bias point.

M3 - Conference article

AN - SCOPUS:0036318721

SN - 0149-645X

VL - 1

SP - 597

EP - 599

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2002 IEEE MTT-S International Microwave Symposium Digest

Y2 - 2 June 2002 through 7 June 2002

ER -

Development and verification of a new non-linear MOSFET model

Abstract

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